Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI and Si XII. The energies have been calculated with the relativistic Multi-Reference Møller-Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) on-line database. The average deviation of valence level energies ranges from 0.20 eV in Si V to 0.04 eV in Si XII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate dataset presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.

中文翻译：

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硅的L-壳离子的相对论MR-MP能级。

报告了Si V，Si VI，Si VII，Si VIII，Si IX，Si X，Si XI和Si XII的能级能量。能量是用相对论的多参考穆勒-普莱塞摄动理论方法计算的，其中包括价态和空位态，nl最高为5f。通过与美国国家标准技术研究院（NIST）在线数据库中列出的推荐数据进行比较，可以确定计算出的电平能量的精度。价能级的平均偏差范围从Si V中的0.20 eV到Si XII中的0.04 eV。对于K空位状态，NIST数据库中推荐的可用值限于Si XII和Si XIII。对于K-空位状态，平均能量偏差低于0.3 eV。此处提供的广泛而准确的数据集大大增加了可用参考水平能量的数量。