Here, large-scale and uniform hexagonal zinc oxide (ZnO) nanosheet films were deposited onto indium tin oxide (ITO)-coated transparent conducting glass substrates via a facile galvanic displacement deposition process. Compared with other commonly used solution methods, this process avoids high temperature and electric power as well as supporting agents to make it simple and cost-effective. The as-fabricated ZnO nanosheet films have uniform hexagonal wurtzite structure. The photoelectrochemical (PEC) cell based on ZnO nanosheet film/ITO photoelectrode was also fabricated and its performance was improved by optimizing the solution concentration. A higher photocurrent density of ~500 μA cm-2 under AM 1.5 G simulated illumination of 100 mW cm-2 with zero bias potential (vs. Ag/AgCl electrode) was obtained, which may ascribe to the increased surface-to-volume ratio of disordered ZnO nanosheet arrays. Our developed method may be used to deposit other oxide semiconductors, and the ZnO nanosheet film/ITO PEC cell can be used to design low-cost optoelectronic and photoelectrochemical devices.

中文翻译：

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六边形 ZnO 纳米片薄膜的简便自组装合成及其光电化学性能。

在这里，通过简单的电流置换沉积工艺，将大面积均匀的六方氧化锌 (ZnO) 纳米片薄膜沉积在涂有氧化铟锡 (ITO) 的透明导电玻璃基板上。与其他常用的解决方法相比，该工艺避免了高温和电力以及辅助剂，使其简单且具有成本效益。制备的 ZnO 纳米片薄膜具有均匀的六方纤锌矿结构。还制备了基于ZnO纳米片薄膜/ITO光电极的光电化学（PEC）电池，并通过优化溶液浓度提高了其性能。在 100 mW cm-2 的 AM 1.5 G 模拟光照下，零偏压（相对于 Ag/AgCl 电极），获得了约 500 μA cm-2 的更高光电流密度，这可能归因于无序 ZnO 纳米片阵列的表面积与体积比的增加。我们开发的方法可用于沉积其他氧化物半导体，ZnO纳米片薄膜/ITO PEC电池可用于设计低成本的光电和光电化学器件。