We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance technique with the capability to provide detailed physical and chemical information about reliability limiting defects in semiconductor devices. EDMR measurements have generally required a complex apparatus, not typically found in solid-state electronics laboratories. The union of a semiconductor probing station with EDMR allows powerful analytical measurements to be performed within individual devices at the wafer level. Our novel approach replaces the standard magnetic resonance microwave cavity or resonator with a small non-resonant near field microwave probe. Using this new approach we have demonstrated bipolar amplification effect and spin dependent charge pumping in various SiC based MOSFET structures. Although our studies have been limited to SiC based devices, the approach will be widely applicable to other types of MOSFETs, bipolar junction transistors, and various memory devices. The replacement of the resonance cavity with the very small non-resonant microwave probe greatly simplifies the EDMR detection scheme and allows for the incorporation of this powerful tool with a wafer probing station. We believe this scheme offers great promise for widespread utilization of EDMR in semiconductor reliability laboratories.

中文翻译：

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晶圆级电检测磁共振：探测站中的磁共振

我们报告了一种新的半导体可靠性技术，该技术在传统的半导体晶片探测站内结合了电检测磁共振 (EDMR) 光谱仪。EDMR 是一种超灵敏电子顺磁共振技术，能够提供有关半导体器件可靠性限制缺陷的详细物理和化学信息。EDMR 测量通常需要一个复杂的设备，通常在固态电子实验室中找不到。半导体探测站与 EDMR 的结合允许在晶圆级的单个设备中执行强大的分析测量。我们的新方法用小型非谐振近场微波探头代替标准磁共振微波腔或谐振器。使用这种新方法，我们已经在各种基于 SiC 的 MOSFET 结构中展示了双极放大效应和自旋相关电荷泵。尽管我们的研究仅限于基于 SiC 的器件，但该方法将广泛适用于其他类型的 MOSFET、双极结型晶体管和各种存储器件。用非常小的非谐振微波探头替换谐振腔极大地简化了 EDMR 检测方案，并允许将这种强大的工具与晶片探测站结合起来。我们相信该方案为在半导体可靠性实验室中广泛使用 EDMR 提供了广阔的前景。该方法将广泛适用于其他类型的 MOSFET、双极结型晶体管和各种存储设备。用非常小的非谐振微波探头替换谐振腔极大地简化了 EDMR 检测方案，并允许将这种强大的工具与晶片探测站结合起来。我们相信该方案为在半导体可靠性实验室中广泛使用 EDMR 提供了广阔的前景。该方法将广泛适用于其他类型的 MOSFET、双极结型晶体管和各种存储设备。用非常小的非谐振微波探头替换谐振腔极大地简化了 EDMR 检测方案，并允许将这种强大的工具与晶片探测站结合起来。我们相信该方案为在半导体可靠性实验室中广泛使用 EDMR 提供了广阔的前景。