The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed selfassembly, nanophotonics/plasmonics, and resistive switches and selectors, are examined as exemplars of important post-CMOS technologies. Materials, devices, and architectures emerging from these technologies pose new metrology requirements: defect detection, possibly subsurface, in soft materials, accurate measurement of size, shape, and roughness of structures for nanophotonic devices, contamination-free measurement of surface-sensitive structures, and identification of subtle structural, chemical, or electronic changes of state associated with switching in non-volatile memory elements. Electron-beam techniques are examined in the light of these emerging requirements. The strong electron-matter interaction provides measurable signal from small sample features, rendering electron-beam methods more suitable than most for nanometer-scale metrology, but as is to be expected, solutions to many of the measurement challenges are yet to be demonstrated. The seeds of possible solutions are identified when they are available.

中文翻译：

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研究更新：继 CMOS 之后基于电子束的计量


回顾了后 CMOS 技术中电子计量所面临的挑战的严重性。定向自组装、纳米光子学/等离激元学以及电阻开关和选择器被视为重要的后 CMOS 技术的范例。这些技术中出现的材料、设备和架构提出了新的计量要求：软材料中的缺陷检测（可能是地下缺陷）、纳米光子器件结构的尺寸、形状和粗糙度的精确测量、表面敏感结构的无污染测量、识别与非易失性存储元件切换相关的细微结构、化学或电子状态变化。根据这些新出现的要求对电子束技术进行了研究。强电子-物质相互作用提供了来自小样品特征的可测量信号，使得电子束方法比大多数纳米级计量方法更适合，但正如预期的那样，许多测量挑战的解决方案尚未得到证实。当可能的解决方案可用时，就会识别出它们的种子。