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GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
Reports on Progress in Physics ( IF 19.0 ) Pub Date : 2018-11-05 , DOI: 10.1088/1361-6633/aad3e9
Tetsuya Takeuchi 1 , Satoshi Kamiyama , Motoaki Iwaya , Isamu Akasaki
Affiliation  

This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.

中文翻译:

具有 AlInN/GaN 分布式布拉格反射器的 GaN 基垂直腔面发射激光器

本文描述了具有半导体基分布式布拉格反射器的氮化镓基垂直腔面发射激光器 (VCSEL) 的现状和前景。这些从紫色到绿色区域发射激光的光电器件有望成为下一代显示器和照明的优质光源,例如视网膜扫描显示器和自适应前灯。与已经商业化的基于砷化镓的红外VCSEL相比,讨论了其发展现状和前景。
更新日期:2018-11-05
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