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Electrochemical Screening of Tungsten Trioxide-Nickel Oxide Thin Film Combinatorial Library at Low Nickel Concentrations.
ACS Combinatorial Science Pub Date : 2020-01-10 , DOI: 10.1021/acscombsci.8b00117
Jun-Seob Lee 1, 2 , Cezarina Cela Mardare 1, 3 , Andrei Ionut Mardare 1 , Achim Walter Hassel 1, 3
Affiliation  

The electrochemical behavior of a tungsten trioxide-nickel oxide (WO3-NiO) thin film library was investigated using scanning droplet cell microscopy (SDCM) in 0.1 mol dm-3 sodium perchlorate (NaClO4) solution. The WO3-Ni film library was deposited by thermal coevaporation on an indium tin oxide (ITO)-coated glass substrate in an atomic Ni concentration range from 2.8 to 15.6 at. %. After an oxidation/crystallization heat treatment, the Ni was oxidized and the crystal structure of WO3-NiO was transformed from monoclinic WO3 (3.5 at. % Ni) to cubic WO3 (up to 7.1 at. % Ni) and again to monoclinic WO3 when the Ni amount increased (>11.8 at. %). Proton (H+) intercalation (cathodic reaction) and deintercalation (anodic reaction) into the WO3-NiO mixed phases was induced. Electrochemical impedance spectroscopy (EIS) and Mott-Schottky (M-S) analysis revealed that the WO3-NiO film has n-type bilayer capacitive property, with the outer capacitive layer having a higher defect density than the inner capacitive layer. With a Ni concentration of 7.1 at. %, the WO3-NiO film was the most defective in the library. Introduction of the Ni cation into the WO3 network was associated with changes of the semiconducting properties of the film.

中文翻译:

低镍浓度下三氧化钨-氧化镍薄膜组合库的电化学筛选。

使用扫描液滴电池显微镜 (SDCM) 在 0.1 mol dm-3 高氯酸钠 (NaClO4) 溶液中研究了三氧化钨 - 氧化镍 (WO3-NiO) 薄膜库的电化学行为。WO3-Ni 膜库通过热共蒸发沉积在氧化铟锡 (ITO) 涂层玻璃基板上,Ni 原子浓度范围为 2.8 至 15.6 at。%。经过氧化/结晶热处理后,Ni 被氧化,WO3-NiO 的晶体结构从单斜 WO3(3.5 at.% Ni)转变为立方 WO3(最多 7.1at.% Ni),然后再次转变为单斜 WO3,当Ni 量增加 (>11.8 at. %)。质子 (H+) 嵌入(阴极反应)和脱嵌(阳极反应)到 WO3-NiO 混合相中。电化学阻抗谱(EIS)和莫特-肖特基(MS)分析表明,WO3-NiO薄膜具有n型双层电容特性,外电容层的缺陷密度高于内电容层。镍浓度为 7.1 at。%,WO3-NiO 薄膜是库中缺陷最多的。将 Ni 阳离子引入 WO3 网络与薄膜半导体性能的变化有关。
更新日期:2020-01-10
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