Electrochemical Screening of Tungsten Trioxide-Nickel Oxide Thin Film Combinatorial Library at Low Nickel Concentrations.,ACS Combinatorial Science

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Electrochemical Screening of Tungsten Trioxide-Nickel Oxide Thin Film Combinatorial Library at Low Nickel Concentrations.
ACS Combinatorial Science Pub Date : 2020-01-10 , DOI: 10.1021/acscombsci.8b00117
Jun-Seob Lee _{1,

2} , Cezarina Cela Mardare _{1,

3} , Andrei Ionut Mardare ₁ , Achim Walter Hassel _{1,

3}

Affiliation

The electrochemical behavior of a tungsten trioxide-nickel oxide (WO3-NiO) thin film library was investigated using scanning droplet cell microscopy (SDCM) in 0.1 mol dm-3 sodium perchlorate (NaClO4) solution. The WO3-Ni film library was deposited by thermal coevaporation on an indium tin oxide (ITO)-coated glass substrate in an atomic Ni concentration range from 2.8 to 15.6 at. %. After an oxidation/crystallization heat treatment, the Ni was oxidized and the crystal structure of WO3-NiO was transformed from monoclinic WO3 (3.5 at. % Ni) to cubic WO3 (up to 7.1 at. % Ni) and again to monoclinic WO3 when the Ni amount increased (>11.8 at. %). Proton (H+) intercalation (cathodic reaction) and deintercalation (anodic reaction) into the WO3-NiO mixed phases was induced. Electrochemical impedance spectroscopy (EIS) and Mott-Schottky (M-S) analysis revealed that the WO3-NiO film has n-type bilayer capacitive property, with the outer capacitive layer having a higher defect density than the inner capacitive layer. With a Ni concentration of 7.1 at. %, the WO3-NiO film was the most defective in the library. Introduction of the Ni cation into the WO3 network was associated with changes of the semiconducting properties of the film.

中文翻译：

低镍浓度下三氧化钨-氧化镍薄膜组合库的电化学筛选。

使用扫描液滴电池显微镜 (SDCM) 在 0.1 mol dm-3 高氯酸钠 (NaClO4) 溶液中研究了三氧化钨 - 氧化镍 (WO3-NiO) 薄膜库的电化学行为。WO3-Ni 膜库通过热共蒸发沉积在氧化铟锡 (ITO) 涂层玻璃基板上，Ni 原子浓度范围为 2.8 至 15.6 at。%。经过氧化/结晶热处理后，Ni 被氧化，WO3-NiO 的晶体结构从单斜 WO3（3.5 at.% Ni）转变为立方 WO3（最多 7.1at.% Ni），然后再次转变为单斜 WO3，当Ni 量增加 (>11.8 at. %)。质子 (H+) 嵌入（阴极反应）和脱嵌（阳极反应）到 WO3-NiO 混合相中。电化学阻抗谱（EIS）和莫特-肖特基（MS）分析表明，WO3-NiO薄膜具有n型双层电容特性，外电容层的缺陷密度高于内电容层。镍浓度为 7.1 at。%，WO3-NiO 薄膜是库中缺陷最多的。将 Ni 阳离子引入 WO3 网络与薄膜半导体性能的变化有关。

更新日期：2020-01-10

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