This work presents superconformal, bottom-up Au filling of high aspect ratio through silicon vias (TSVs) along with a predictive framework based on the coupling of suppression breakdown and surface topography. The work extends a previous study of superconformal Au deposition in lower aspect ratio TSVs. Deposition was performed in a Na3AuSO3 electrolyte containing a branched polyethyleneimine (PEI) deposition-rate suppressing additive. Voltammetric measurements using a rotating disk electrode (RDE) were used to assess the impact of the PEI suppressor concentration and transport on the rate of metal deposition, enabling the interplay between metal deposition and suppressor adsorption to be quantified. The positive feedback associated with suppression breakdown gives rise to an S-shaped negative differential resistance (S-NDR). The derived kinetics for suppressor adsorption and consumption were used in a mass conservation model to account for bottom-up filling of patterned features. Predictions, including the impact of deposition potential and additive concentration on feature filling, are shown to match experimental results for filling of TSVs. This further generalizes the utility of the additive derived S-NDR model as a predictive formalism for identifying additives capable of generating localized, void-free filling of TSVs by electrodeposition.

中文翻译：

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通过硅通孔以高深宽比进行超共形自下而上金沉积


这项工作提出了通过硅通孔 (TSV) 进行高纵横比的超共形、自下而上的金填充以及基于抑制击穿和表面形貌耦合的预测框架。这项工作扩展了先前对较低纵横比 TSV 中超共形金沉积的研究。沉积在含有支链聚乙烯亚胺 (PEI) 沉积速率抑制添加剂的 Na3AuSO3 电解质中进行。使用旋转盘电极 (RDE) 进行伏安测量来评估 PEI 抑​​制剂浓度和传输对金属沉积速率的影响，从而量化金属沉积和抑制剂吸附之间的相互作用。与抑制击穿相关的正反馈会产生 S 形负微分电阻 (S-NDR)。导出的抑制器吸附和消耗动力学用于质量守恒模型，以解释图案特征的自下而上填充。预测（包括沉积电位和添加剂浓度对特征填充的影响）与 TSV 填充的实验结果相匹配。这进一步概括了添加剂衍生的 S-NDR 模型作为预测形式的实用性，用于识别能够通过电沉积生成局部、无空隙 TSV 填充的添加剂。