We have fabricated and tested the performance of sub-50nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. For a 30nm×40 μm×2 device, we found f(T) =465GHz at V(ds)=2V, V(g)=0.67V, which is the highest cut-off frequency reported for a MOSFET produced on bulk silicon substrate so far. However, our measurements of f(max) and noise figure indicate that parasitics impose limitations on SHF operation. We also present a high-frequency ac model appropriate to sub-50nm gate length nanotransistors, which incorporates the effects of the parasitics. The model accurately accounts for measurements of the S and Y parameters in the frequency range from 1 to 50GHz.

中文翻译：

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f 高于 460-GHz 的亚 50nm nMOSFET 的小信号性能和建模。

我们制造并测试了亚 50nm 栅极 nMOSFET 的性能，以评估它们在超高频 (SHF) 频段（即 3-30GHz）中混合信号应用的适用性。对于 30nm×40 μm×2 器件，我们发现 f(T) =465GHz，V(ds)=2V，V(g)=0.67V，这是在体硅上生产的 MOSFET 报告的最高截止频率衬底到目前为止。然而，我们对 f(max) 和噪声系数的测量表明寄生效应对 SHF 操作施加了限制。我们还提出了适用于亚 50nm 栅极长度纳米晶体管的高频交流模型，该模型结合了寄生效应。该模型准确地考虑了 1 至 50GHz 频率范围内 S 和 Y 参数的测量。