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Plasma enhanced chemical vapour deposition of silica onto titanium: Analysis of surface chemistry, morphology and hydroxylation
Surface Science ( IF 2.1 ) Pub Date : 2008-07-01 , DOI: 10.1016/j.susc.2008.05.027
Endre J Szili 1 , Sunil Kumar , Roger St C Smart , Rachel Lowe , Eduardo Saiz , Nicolas H Voelcker
Affiliation  

We have been developing and characterising a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. The silica coatings were used for improving the corrosion resistance of metals and as bioactive coatings on biomedical metallic implants. We have improved the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-SiO2) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-SiO2 coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, the work presented and discussed in this paper was carried out to analyse the characteristic features of PECVD-SiO2 deposited on titanium (Ti) substrates (PECVD-SiO2–Ti). We determined that the PECVD-SiO2 coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-SiO2 surface was composed of stoichiometric SiO2, showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain surface hydroxyl groups.

中文翻译:

二氧化硅在钛上的等离子体增强化学气相沉积:表面化学、形态和羟基化分析

我们一直在开发和表征通过等离子体增强化学气相沉积 (PECVD) 程序使用四乙氧基硅烷 (TEOS) 作为主要前体沉积二氧化硅薄膜的程序。二氧化硅涂层用于提高金属的耐腐蚀性和作为生物医学金属植入物的生物活性涂层。我们改进了 PECVD 方法,用于在金属上生产高质量和可重复的 PECVD-二氧化硅 (PECVD-SiO2) 涂层,主要用于生物材料应用。为了了解 PECVD-SiO2 涂层与生物物种(例如蛋白质和细胞)的相互作用,重要的是首先分析使用优化参数沉积的二氧化硅薄膜的特性。所以,本文介绍和讨论的工作是为了分析沉积在钛 (Ti) 衬底上的 PECVD-SiO2 (PECVD-SiO2-Ti) 的特征。我们确定 Ti 上的 PECVD-SiO2 涂层与基材表面共形,牢固地粘附在下面的基材上并且抗分层。PECVD-SiO2 表面由化学计量的 SiO2 组成,碳含量低(低于 10 at.%)并且非常亲水(接触角 <10°)。最后,我们还表明 PECVD-Si 涂层含有表面羟基。PECVD-SiO2 表面由化学计量的 SiO2 组成,碳含量低(低于 10 at.%)并且非常亲水(接触角 <10°)。最后,我们还表明 PECVD-Si 涂层含有表面羟基。PECVD-SiO2 表面由化学计量的 SiO2 组成,碳含量低(低于 10 at.%)并且非常亲水(接触角 <10°)。最后,我们还表明 PECVD-Si 涂层含有表面羟基。
更新日期:2008-07-01
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