InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 × 103 A W-1 and external quantum efficiency of 5.04 × 105 %. This photodetector may have potential applications in integrated optoelectronic devices and systems.

中文翻译：

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用于室温高性能近红外光电探测器的单晶InGaAs纳米线。

InGaAs是一种重要的带隙可变三元半导体，在电子和光电子领域具有广泛的应用。在这项工作中，通过化学气相沉积法合成了单晶InGaAs纳米线。光致发光测量结果表明，InGaAs纳米线在近红外区域具有较强的发光能力。首次构造了基于生长中的InGaAs纳米线的光电探测器。它在红外区域的宽光谱范围内显示出良好的光响应，响应度为6.5×103 A W-1，外部量子效率为5.04×105％。该光电探测器可能在集成光电设备和系统中具有潜在的应用。