The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO x /TiO x /TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO x with 4-nm-thick polycrystalline CrO x layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1-8 µm) owing to reduction of leakage current through the TiO x layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrO x layer and filament formation/rupture in the TiO x layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

中文翻译：

---

通过减小新型 Cr/CrO x /TiO x /TiN 结构中的器件尺寸来观察阻变存储器。

首次通过减小Cr/CrO x /TiO x /TiN结构中的器件尺寸来观察100个随机测量器件的阻变存储器特性。透射电子显微镜图像证实通孔尺寸为 0.4 µm。观察到 3 nm 厚的非晶 TiO x 和 4 nm 厚的多晶 CrO x 层。与其他较大尺寸器件 (1-8 µm) 相比，由于通过 TiO x 层的漏电流减少，小型 0.4 µm 器件在 300 µA 的电流顺应性下表现出可逆电阻开关。由于较高的斜率/形状因子，威布尔分布阐明了良好的器件间均匀性和 >85% 的良率。切换机制基于 CrO x 层中的氧空位迁移和 TiO x 层中的细丝形成/断裂。已获得 >105 个周期的长读脉冲耐久性、6 小时的良好数据保留以及 1 µs 脉冲宽度的编程/擦除速度。