Direct synthesis of high-quality doped graphene on dielectric substrates without transfer is highly desired for simplified device processing in electronic applications. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, a simple and transfer-free synthesis of high-quality doped graphene on the dielectric substrate has been developed using a thin Cu layer as the top catalyst and polycyclic aromatic hydrocarbons as both carbon precursors and doping sources. N-doped and N, F-co-doped graphene have been achieved using TPB and F16CuPc as solid carbon sources, respectively. The growth conditions were systematically optimized and the as-grown doped graphene were well characterized. The growth strategy provides a controllable transfer-free route for high-quality doped graphene synthesis, which will facilitate the practical applications of graphene.

中文翻译：

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使用固体碳源在介电基底上直接合成共掺杂石墨烯。

为了简化电子应用中的器件加工，非常需要在介电基板上直接合成高质量掺杂石墨烯而无需转移。然而，直接在适合设备应用的基板上合成石墨烯，尽管需求很高，但仍然难以实现且具有挑战性。在这里，使用薄铜层作为顶部催化剂和多环芳烃作为碳前体和掺杂源，开发了在介电基板上简单且无转移地合成高质量掺杂石墨烯。分别使用TPB和F16CuPc作为固体碳源实现了N掺杂和N、F共掺杂石墨烯。系统地优化了生长条件，并对生长的掺杂石墨烯进行了良好的表征。该生长策略为高质量掺杂石墨烯的合成提供了一条可控的无转移路线，将促进石墨烯的实际应用。