Low voltage operational organic transistors (< 4 V) based on pentacene were successfully fabricated with hybrid dielectric films composed of aluminum oxide using atomic layer deposition and various phosphonic acid-based self-assembled monolayers as the gate dielectrics. High capacitances up to 279 nF/cm2, low leakage current densities of 10−8 A/cm2 at 6 V, and high breakdown fields up to 7.5 MV/cm were obtained. The transistors with the octadecylphosphonic acid hybrid dielectric exhibited an improved saturation mobility of 0.58 cm2/Vs, a subthreshold slope of 151 mV/decade, a threshold voltage of − 1.84 V and an on–off current ratio of 106. The low surface energies of the self-assembled monolayers having non-polar terminal groups, such as methyl and pentafluorophenoxy, improved the carrier conduction of the transistors due to the pentacene growth with an edge-on orientation for low voltage operation. The pentafluorophenoxy end-group showed an accumulation of holes at the semiconductor-dielectric interface.

中文翻译：

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由Al2O3和膦酸自组装单层组成的混合电介质，可改善低压有机场效应晶体管的性能。

利用原子层沉积和各种基于膦酸的自组装单层作为栅极电介质，成功地用由氧化铝组成的混合电介质膜成功地制造了并五苯基于低压的有机晶体管（<4 V）。获得了高达279 nF / cm2的高电容，6 V时10-8 A / cm2的低泄漏电流密度以及高达7.5 MV / cm的高击穿场。具有十八烷基膦酸杂化电介质的晶体管的饱和迁移率提高了0.58 cm2 / Vs，亚阈值斜率达到151 mV /十倍，阈值电压为− 1.84 V，开/关电流比为106。具有非极性端基的自组装单分子层，例如甲基和五氟苯氧基，由于并五苯的生长具有边沿导通的取向，从而改善了晶体管的载流子导通，从而实现了低压操作。五氟苯氧基端基在半导体-电介质界面上显示出空穴的积累。