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Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles
Scanning Pub Date : 2018-07-02 , DOI: 10.1155/2018/5489596
Dmitry Filatov 1 , Inga Kazantseva 2 , Dmitry Antonov 1 , Ivan Antonov 3 , Maria Shenina 1 , Dmitry Pavlov 2 , Oleg Gorshkov 1, 2
Affiliation  

We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage (I-V) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I-V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive (“ON”) state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.

中文翻译:

含 Au 纳米粒子的氧化钇稳定氧化锆薄膜电阻转换的导电原子力显微镜研究

我们报告了通过导电原子力显微镜 (CAFM) 研究具有单层 Au 纳米粒子 (NP) 的超薄(厚度约 5 nm)氧化钇稳定氧化锆 (YSZ) 薄膜中的电阻转换 (RS)。除了 CAFM 探针与对应于双极 RS 的研究薄膜表面的接触的电流-电压 (IV) 曲线中的蝶形磁滞回线外,在样品的 IV 曲线中还观察到了负微分电阻 (NDR)。 AFM 探针与处于导电(“ON”)状态的 Au NP 接触到 YSZ 薄膜。NDR 与电子通过 YSZ 薄膜中导电丝中内置的超细(直径为 1 至 2 nm)Au NP 中的尺寸量子化能态的共振隧穿有关。
更新日期:2018-07-02
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