Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

参赛者：

刘超-南京工业大学

作品简介：

光电活性CsPbI3的形成，需要高温退火克服相转变所需要的能垒，且易自发转变成黄相，限制了其应用。我们通过中间相工程，调控相转变路径，降低了活化能垒，低温制备了高质量的CsPbI3薄膜。发光器件外量子效率达到10.4%。

The formation of photoelectrically active CsPbI3 requires high-temperature annealing to overcome the energy barrier required for phase transition, and it is easy to transform into a yellow phase spontaneously, which limits its application.Through intermediate-phase engineering, we controlled the phase transition path, lowered the activation energy barrier, and prepared high-quality CsPbI3 films at low temperature.The external quantum efficiency of the light-emitting device reaches 10.4%.