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Reducing Surface Recombination Velocities at the Electrical Contacts Will Improve Perovskite Photovoltaics
ACS Energy Letters ( IF 19.3 ) Pub Date : 2018-12-10 00:00:00 , DOI: 10.1021/acsenergylett.8b02058
Jian Wang 1 , Weifei Fu 2 , Sarthak Jariwala 1, 2 , Irika Sinha 1 , Alex K.-Y. Jen 1, 2, 3, 4 , David S. Ginger 1
Affiliation  

We explore the effects of nonradiative recombination at the extracting contacts on the achievable performance of halide perovskite photovoltaic cells. First, we perform device simulations using standard drift-diffusion models with experimental semiconductor parameters matching those of methylammonium lead triiodide (MAPbI3). We quantify the range of surface recombination velocities (SRVs) that would allow this archetypal perovskite to reach power conversion efficiencies of 27%. In particular, for contacts with well-aligned energy levels, SRVs of ∼1–10 cm/s should enable open-circuit voltages of 1.30 V, within 96% of the Shockley–Queisser limit. Next, we use time-resolved photoluminescence to experimentally determine the SRVs on 14 different common electron- and hole-extracting contacts, including TiO2, SnO2, ZnO, PCBM, ITIC, ICBA, TPBi, PEDOT:PSS, PTAA, PVK, NiO, MoO3, WO3, and spiro-OMeTAD. These results point the way to the selection and rational engineering of better contacts as a means to achieve higher efficiencies in perovskite solar cells.

中文翻译:

降低电触头的表面复合速度将改善钙钛矿光伏

我们探索在提取接触对卤化物钙钛矿光伏电池可实现性能非辐射复合的影响。首先,我们使用标准的漂移扩散模型进行器件仿真,其实验半导体参数与甲基碘化三碘化铅(MAPbI 3)的参数相匹配。我们量化了表面复合速度(SRV)的范围,该范围可使该原型钙钛矿达到27%的功率转换效率。特别是对于能量水平良好的触点,SRV约为1–10 cm / s时,应能实现1.30 V的开路电压,该电压应在Shockley-Queisser限制的96%之内。接下来,我们使用时间分辨的光致发光来实验确定包括TiO在内的14种不同的常见电子和空穴提取触点上的SRV2,SnO 2,ZnO,PCBM,ITIC,ICBA,TPBi,PEDOT:PSS,PTAA,PVK,NiO,MoO 3,WO 3和螺-OMeTAD。这些结果为更好的接触点的选择和合理设计指明了途径,以实现钙钛矿太阳能电池更高效率的方法。
更新日期:2018-12-10
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