InGaN-based photovoltaics (PV) devices have attracted great attentions because of the excellent photoelectric performance over the past decades. The photocurrent of the InGaN/GaN MQWs solar cells could be further improved by coupling plasmonic with piezo-phototronic effect. Here, we fabricated an InGaN/GaN MQWs solar cells with Ag nanoparticles and the short circuit current of the solar cell was improved by 40% with a static external strain applied. The transmission spectrum and the electromagnetic field distributions of the nanoparticles array were simulated with a finite element analysis model. The physical mechanism for light absorption enhancement by the coupling effect in the quantum well structures was illuminated through a self-consistent numerical calculation with non-linear piezoelectricity polarization. This work demonstrated the coupling between the plasmonic and piezo-phototronic effect achieves significant increase in InGaN/GaN MQWs solar cell power conversion efficiency without any complicated process involved.

在过去的几十年中，基于InGaN的光伏（PV）器件备受关注。通过将等离子体与压电效应耦合，可以进一步提高InGaN / GaN MQWs太阳能电池的光电流。在这里，我们用银纳米粒子制造了一个InGaN / GaN MQWs太阳能电池，并且在施加静态外部应变的情况下，太阳能电池的短路电流提高了40％。用有限元分析模型模拟了纳米颗粒阵列的透射光谱和电磁场分布。通过非线性压电极化的自洽数值计算，阐明了量子阱结构中耦合效应增强光吸收的物理机制。