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Lattice‐matched four‐junction tandem solar cell including two dilute nitride bottom junctions
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-12-10 , DOI: 10.1002/pip.3094 Arto Aho 1 , Riku Isoaho 1 , Lauri Hytönen 1 , Timo Aho 1 , Marianna Raappana 1 , Ville Polojärvi 1 , Antti Tukiainen 1 , Jarno Reuna 1 , Severi Mäkelä 1 , Mircea Guina 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-12-10 , DOI: 10.1002/pip.3094 Arto Aho 1 , Riku Isoaho 1 , Lauri Hytönen 1 , Timo Aho 1 , Marianna Raappana 1 , Ville Polojärvi 1 , Antti Tukiainen 1 , Jarno Reuna 1 , Severi Mäkelä 1 , Mircea Guina 1
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Monolithic four‐junction solar cells incorporating two dilute nitride (GaInNAsSb) bottom junctions are reported. The dilute nitride junctions have band gaps of 0.9 and 1.2 eV, while the top junctions have band gaps of 1.4 and 1.9 eV. By using experimental‐based parametrization, it was estimated that the four‐junction solar cell could theoretically exhibit efficiency levels of 34.7% at one sun, 43.2% at 100 suns, and 46.4% at 1000 suns for AM1.5D illumination. The most challenging subcell in terms of fabrication is the GaInNAsSb bottom junction with 0.9 eV band gap. For this subcell, a background doping level down to 5 × 1014 cm−3 and a high charge carrier lifetime up to 2 to 4 nanoseconds are reported, which reflects high values for current and voltage. An experimental AlGaAs/GaAs/GaInNAsSb/GaInNAsSb solar cell structure was fabricated by molecular beam epitaxy. At one‐sun AM1.5D illumination, the experimental cell exhibited an efficiency of 25%, an average quantum efficiency of 91%, and an open circuit voltage, which is about 87% of the estimated potential. The cell exhibited maximum efficiency of 37% at 100‐sun concentration.
中文翻译：
晶格匹配的四结串联太阳能电池，包括两个稀氮化物底部结
据报道，带有两个稀氮化物（GaInNAsSb）底部结的单片四结太阳能电池。稀氮化物结的带隙为0.9和1.2 eV，而顶部结的带隙为1.4和1.9 eV。通过使用基于实验的参数化，据估计，对于AM1.5D照明，四结太阳能电池在理论上可以表现出在1个太阳下为34.7％，在100个太阳下为43.2％和在1000个太阳下为46.4％的效率。就制造而言，最具挑战性的子电池是具有0.9 eV带隙的GaInNAsSb底部结。对于此子电池，背景掺杂水平低至5×10 14 cm -3据报道，电荷载流子的寿命高达2到4纳秒，这反映了电流和电压的高值。通过分子束外延制备了实验性的AlGaAs / GaAs / GaInNAsSb / GaInNAsSb太阳能电池结构。在单太阳AM1.5D照明下，实验电池的效率为25％，平均量子效率为91％，开路电压约为估计电势的87％。在100太阳浓度下，该电池的最大效率为37％。
更新日期：2018-12-10
中文翻译：
晶格匹配的四结串联太阳能电池，包括两个稀氮化物底部结
据报道，带有两个稀氮化物（GaInNAsSb）底部结的单片四结太阳能电池。稀氮化物结的带隙为0.9和1.2 eV，而顶部结的带隙为1.4和1.9 eV。通过使用基于实验的参数化，据估计，对于AM1.5D照明，四结太阳能电池在理论上可以表现出在1个太阳下为34.7％，在100个太阳下为43.2％和在1000个太阳下为46.4％的效率。就制造而言，最具挑战性的子电池是具有0.9 eV带隙的GaInNAsSb底部结。对于此子电池，背景掺杂水平低至5×10 14 cm -3据报道，电荷载流子的寿命高达2到4纳秒，这反映了电流和电压的高值。通过分子束外延制备了实验性的AlGaAs / GaAs / GaInNAsSb / GaInNAsSb太阳能电池结构。在单太阳AM1.5D照明下，实验电池的效率为25％，平均量子效率为91％，开路电压约为估计电势的87％。在100太阳浓度下，该电池的最大效率为37％。
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