Ultra-high energy storage performance of lead-free ferroelectric materials has been achieved at room temperature by heterostructure composite based on environment-friendly BaSn_0.15Ti_0.85O₃ and Ba_0.6Sr_0.4TiO₃ thin films. The dielectric constant and loss tangent of BaSn_0.15Ti_0.85O₃ layers grown on the Ba_0.6Sr_0.4TiO₃ layers respectively are calculated as 402 and 0.0137 at 100 kHz. The interfacial layer between BaSn_0.15Ti_0.85O₃ and Ba_0.6Sr_0.4TiO₃ layers can improve the dielectric constant and reduce the loss tangent of heterostructures. The electrical breakdown strength can be significantly enhanced by the interfacial layer, and the influence mechanism is proposed. Ultra-high energy storage density as high as 43.28 J/cm³, is obtained at a sustained high bias electric field of 2.37 MV/cm with a power density of 6.47 MW/cm³ and an efficiency of 84.91% in the BaSn_0.15Ti_0.85O₃/Ba_0.6Sr_0.4TiO₃ heterostructure thin films.

通过基于环保的BaSn _0.15 Ti _0.85 O ₃和Ba _0.6 Sr _0.4 TiO ₃薄膜的异质结构复合材料，在室温下实现了无铅铁电材料的超高储能性能。在100 kHz下，分别在Ba _0.6 Sr _0.4 TiO ₃层上生长的BaSn _0.15 Ti _0.85 O ₃层的介电常数和损耗角正切计算为402和0.0137。BaSn _0.15 Ti _0.85 O ₃和Ba _0.6之间的界面层Sr _0.4 TiO ₃层可以提高介电常数，减少异质结构的损耗角正切。通过界面层可以显着提高电击穿强度，并提出了影响机理。在2.37 MV / cm的持续高偏置电场下获得了高达43.28 J / cm ^3的超高储能密度，在BaSn _0.15 Ti中的功率密度为6.47 MW / cm ³，效率为84.91％。_0.85 O ₃ / Ba _0.6 Sr _0.4 TiO ₃异质结构薄膜。