Beating the heat by blending Charge carriers move through semiconductor polymers by hopping transport. In principle, these polymers should be more conductive at higher temperatures. In practice, conductivity drops at high temperatures because interchain contacts are disrupted, which limits potential applications. Gumyusenge et al. now show that appropriate blending of a semicrystalline conjugated polymer with an insulating polymer that has a high glass-transition temperature creates a morphology that stabilizes a network of semiconductor channels. High charge conductivity was maintained in these materials up to 220°C. Science, this issue p. 1131 Polymer semiconductors can maintain their conductivity at high temperatures when blended into insulating host polymers. Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

中文翻译：

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在高温下表现出稳定电荷传输的半导体聚合物共混物

通过混合消除热量 电荷载流子通过跳跃传输穿过半导体聚合物。原则上，这些聚合物在较高温度下应具有更高的导电性。实际上，由于链间接触被破坏，电导率在高温下会下降，这限制了潜在的应用。Gumyusenge 等。现在表明，半结晶共轭聚合物与具有高玻璃化转变温度的绝缘聚合物的适当混合会产生稳定半导体通道网络的形态。这些材料在高达 220°C 的温度下仍保持高电荷电导率。科学，这个问题 p。1131 聚合物半导体在混合到绝缘主体聚合物中时可以在高温下保持其导电性。虽然高温操作（即，超过 150°C）是许多电子应用的极大兴趣，在升高的温度下实现有机半导体的稳定载流子迁移率从根本上具有挑战性。我们报告了一种制造热稳定高温半导体聚合物共混物的一般策略，该共混物由互穿的半结晶共轭聚合物和高玻璃化转变温度绝缘基质组成。如果设计得当，这种聚合物共混物在薄膜晶体管中在从室温到 220°C 的宽温度范围内显示出对温度不敏感的电荷传输行为，空穴迁移率超过 2.0 cm2/V·s。我们报告了一种制造热稳定高温半导体聚合物共混物的一般策略，该共混物由互穿的半结晶共轭聚合物和高玻璃化转变温度绝缘基质组成。如果设计得当，这种聚合物共混物在薄膜晶体管中在从室温到 220°C 的宽温度范围内显示出对温度不敏感的电荷传输行为，空穴迁移率超过 2.0 cm2/V·s。我们报告了一种制造热稳定高温半导体聚合物共混物的一般策略，该共混物由互穿的半结晶共轭聚合物和高玻璃化转变温度绝缘基质组成。如果设计得当，这种聚合物共混物在薄膜晶体管中在从室温到 220°C 的宽温度范围内显示出对温度不敏感的电荷传输行为，空穴迁移率超过 2.0 cm2/V·s。