Abstract In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μB because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.

中文翻译：

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稀磁半导体GaGdAs单层和超晶格中的磁化起源

摘要 本研究制备了单层 (ML) 和超晶格 (SL) 稀释的磁性 GaGdAs 半导体，并通过 X 射线吸收光谱 (XAS) 和磁性圆二色性 (MCD) 与数值比较分析了它们的电子态。在宏观磁化的情况下观察到。从MCD获得的每个原子的Gd磁矩显示出比从超导量子干涉装置（SQUID）获得的值低的值，并且与ML结构相比，在SL结构中倾向于更大。我们进一步观察到，由于 Si 掺杂增加了载流子密度，Gd 磁矩增强了数十 μB。透射电子显微镜图像显示直径为 2-3 nm 的暗区，