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Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns†
Molecular Systems Design & Engineering ( IF 3.2 ) Pub Date : 2018-12-04 00:00:00 , DOI: 10.1039/c8me00046h S. Gottlieb 1, 2, 3, 4 , B. Rösner 5, 6, 7, 8 , L. Evangelio 1, 2, 3, 4 , M. Fernández-Regúlez 1, 2, 3, 4 , A. Nogales 4, 9, 10 , M. C. García-Gutiérrez 4, 9, 10 , T. F. Keller 11, 12, 13, 14, 15 , J. Fraxedas 4, 16, 17, 18, 19 , T. A. Ezquerra 4, 9, 10 , C. David 5, 6, 7, 8 , F. Perez-Murano 1, 2, 3, 4
Molecular Systems Design & Engineering ( IF 3.2 ) Pub Date : 2018-12-04 00:00:00 , DOI: 10.1039/c8me00046h S. Gottlieb 1, 2, 3, 4 , B. Rösner 5, 6, 7, 8 , L. Evangelio 1, 2, 3, 4 , M. Fernández-Regúlez 1, 2, 3, 4 , A. Nogales 4, 9, 10 , M. C. García-Gutiérrez 4, 9, 10 , T. F. Keller 11, 12, 13, 14, 15 , J. Fraxedas 4, 16, 17, 18, 19 , T. A. Ezquerra 4, 9, 10 , C. David 5, 6, 7, 8 , F. Perez-Murano 1, 2, 3, 4
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In this paper, we investigate the directed self-assembly of block copolymers in topographical guiding patterns with feature sizes in the range of the block copolymer half-pitch. In particular, we present the self-assembly of an 11.7 nm half-pitch block copolymer in sub-10 nm resolution guiding patterns fabricated by the direct e-beam exposure of hydrogen silsesquioxane (HSQ). One result of this analysis is that the block copolymer self-assembles such that the guiding pattern features form part of the 3-D architecture of the film. We are capable of determining a shift in the block copolymer pitch as a function of the guiding pattern pitch with sub-nanometer accuracy by means of both real-space (AFM, SEM) and reciprocal-space techniques (GISAXS). An interesting result is that the block copolymer self-assembly in the studied structures depends on the guiding pattern pitch rather than on the trench width as in standard graphoepitaxy. We analyze the structures by means of a free energy model and present both theoretical and experimental evidence of a narrower processing window for such kind of guiding patterns than for regular directed self-assembly using wide topographical guiding patterns, and discuss the origin of this effect. We argue that chain deformation in the vicinity of the top cap of the guiding pattern feature is responsible for an increase of the free energy of the ordered state, which leads to a smaller energy difference between the defect-free and defective self-assembly than that for the observed self-assembly morphology.
中文翻译：
低于10 nm地形学导向图案的嵌段共聚物的自组装形态†
在本文中，我们研究了在地形导向模式下嵌段共聚物的定向自组装，其特征尺寸在嵌段共聚物半节距范围内。特别是，我们提出了通过直接电子束暴露的倍半硅氧烷氢（HSQ）制备的亚1.7纳米间距的11.7纳米半嵌段共聚物的自组装，其分辨率低于10纳米。该分析的结果是，嵌段共聚物自组装成使得引导图案特征形成膜的3-D结构的一部分。我们能够通过实空间技术（AFM，SEM）和倒数空间技术（GISAXS）来确定亚纳米级精度下嵌段共聚物间距随导向图案间距的变化。一个有趣的结果是，在所研究的结构中，嵌段共聚物的自组装取决于引导图案的间距，而不是像标准石墨外延中那样取决于沟槽的宽度。我们通过自由能模型对结构进行分析，并给出了这种指导模式比使用宽幅地形指导模式进行常规有向自组装的过程窗口更窄的理论和实验证据，并讨论了这种效应的起源。我们认为，引导图案特征顶盖附近的链形变形导致有序状态的自由能增加，这导致无缺陷和有缺陷的自组装之间的能量差小于无序和有缺陷的自组装之间的能量差。用于观察到的自组装形态。
更新日期：2018-12-04
中文翻译：
低于10 nm地形学导向图案的嵌段共聚物的自组装形态†
在本文中，我们研究了在地形导向模式下嵌段共聚物的定向自组装，其特征尺寸在嵌段共聚物半节距范围内。特别是，我们提出了通过直接电子束暴露的倍半硅氧烷氢（HSQ）制备的亚1.7纳米间距的11.7纳米半嵌段共聚物的自组装，其分辨率低于10纳米。该分析的结果是，嵌段共聚物自组装成使得引导图案特征形成膜的3-D结构的一部分。我们能够通过实空间技术（AFM，SEM）和倒数空间技术（GISAXS）来确定亚纳米级精度下嵌段共聚物间距随导向图案间距的变化。一个有趣的结果是，在所研究的结构中，嵌段共聚物的自组装取决于引导图案的间距，而不是像标准石墨外延中那样取决于沟槽的宽度。我们通过自由能模型对结构进行分析，并给出了这种指导模式比使用宽幅地形指导模式进行常规有向自组装的过程窗口更窄的理论和实验证据，并讨论了这种效应的起源。我们认为，引导图案特征顶盖附近的链形变形导致有序状态的自由能增加，这导致无缺陷和有缺陷的自组装之间的能量差小于无序和有缺陷的自组装之间的能量差。用于观察到的自组装形态。
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