Interface‐dominated materials such as nanocrystalline thin films have emerged as an enthralling class of materials able to engineer functional properties of transition metal oxides widely used in energy and information technologies. In particular, it has been proven that strain‐induced defects in grain boundaries of manganites deeply impact their functional properties by boosting their oxygen mass transport while abating their electronic and magnetic order. In this work, the origin of these dramatic changes is correlated for the first time with strong modifications of the anionic and cationic composition in the vicinity of strained grain boundary regions. We are also able to alter the grain boundary composition by tuning the overall cationic content in the films, which represents a new and powerful tool, beyond the classical space charge layer effect, for engineering electronic and mass transport properties of metal oxide thin films useful for a collection of relevant solid‐state devices.

中文翻译：

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通过调整晶界中的局部非化学计量学来调整锰矿中的工程运输

诸如纳米晶体薄膜之类的以界面为主导的材料已经成为令人着迷的一类材料，它们能够设计出广泛用于能源和信息技术中的过渡金属氧化物的功能特性。特别是，业已证明，锰引起的晶界中的应变诱发缺陷可通过促进其氧质量传输，同时减弱其电子和磁序而深刻影响其功能性能。在这项工作中，这些剧烈变化的起源首次与应变晶界区域附近的阴离子和阳离子组成的强烈变化相关。我们还可以通过调整薄膜中的总阳离子含量来改变晶界组成，这是一种强大的新工具，