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Photonic Memory: Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure (Adv. Mater. 49/2018)
Advanced Materials ( IF 29.4 ) Pub Date : 2018-12-03 , DOI: 10.1002/adma.201870377
Yongbiao Zhai 1 , Xueqing Yang 2 , Feng Wang 2 , Zongxiao Li 3 , Guanglong Ding 1 , Zhifan Qiu 1 , Yan Wang 1 , Ye Zhou 3 , Su-Ting Han 1
Affiliation  

In article number 1803563, Feng Wang, Ye Zhou, Su‐Ting Han, and co‐workers develop an NIR photonic memristor based on a MoS2–upconversion nanoparticle heterostructure. The heterostructure, acting as exciton generation/separation centers, remarkably improves NIR‐light‐controlled memory performance. Meanwhile, the as‐fabricated photonic memory array also displays high integration with photodetectors, and can be used to make a core component of a bioinspired vision system.
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中文翻译:

光子记忆:基于直接生长的MoS2上转换纳米粒子异质结构的红外敏感记忆(Adv。Mater。49/2018)

在文章1803563中,王峰,周野,韩素婷和他的同事开发了一种基于MoS 2上转换纳米粒子异质结构的NIR光子忆阻器。作为激子产生/分离中心的异质结构显着提高了近红外光控制的存储性能。同时,预制的光子存储阵列还显示出与光电探测器的高度集成,可用于制造生物启发式视觉系统的核心组件。
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更新日期:2018-12-03
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