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Improved thermoelectric properties of n-type Bi2S3 via grain boundaries and in-situ nanoprecipitates
Journal of the European Ceramic Society ( IF 5.8 ) Pub Date : 2018-12-01 , DOI: 10.1016/j.jeurceramsoc.2018.11.053
Jian Yang , Junnan Yan , Guiwu Liu , Zhongqi Shi , Guanjun Qiao

To improve the thermoelectric properties of n-type Bi2S3 materials, a certain amount of SbCl3 were added into Bi2S3 materials by a conventional melting method combined with plasma activated sintering (PAS) process. The Bi2S3-based materials evolve from the lamellar- to particle-like structures after SbCl3 doping. The phonon scattering has strong enhancement through the increased grain boundaries and in-situ Bi2S3 nanoprecipitates, resulting in the low lattice thermal conductivity. Meanwhile, the high power factor is achieved because of the marked increase in the electrical conductivity. Hence, the synergistic effect of antimony and chlorine substitutions not only contribute to reduce the thermal conductivity but also tune the electrical transport properties, yielding a peak ZT value of ∼ 0.65 at 773 K for the Bi2S3-1%SbCl3 sample.



中文翻译:

通过晶界和原位纳米沉淀改善n型Bi 2 S 3的热电性能

为了改善n型Bi 2 S 3材料的热电性能,通过常规熔化方法结合等离子体活化烧结(PAS)工艺将一定量的SbCl 3加入Bi 2 S 3材料中。在SbCl 3掺杂之后,Bi 2 S 3基材料从层状结构演变为颗粒状结构。声子的散射通过增加的晶界和原位Bi 2 S 3的作用而具有很强的增强作用纳米沉淀,导致较低的晶格热导率。同时,由于电导率的显着增加而实现了高功率因数。因此,锑和氯取代的协同作用不仅有助于降低热导率,而且可以调节电传输性能,对于Bi 2 S 3 -1%SbCl 3样品,在773 K时ZT峰值约为0.65 。

更新日期:2018-12-01
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