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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction
ACS Nano ( IF 15.8 ) Pub Date : 2018-11-28 00:00:00 , DOI: 10.1021/acsnano.8b07997 Daoyou Guo 1 , Yuanli Su 1 , Haoze Shi 1 , Peigang Li 2 , Nie Zhao 3 , Junhao Ye 4 , Shunli Wang 1 , Aiping Liu 1 , Zhengwei Chen 2 , Chaorong Li 1 , Weihua Tang 2
ACS Nano ( IF 15.8 ) Pub Date : 2018-11-28 00:00:00 , DOI: 10.1021/acsnano.8b07997 Daoyou Guo 1 , Yuanli Su 1 , Haoze Shi 1 , Peigang Li 2 , Nie Zhao 3 , Junhao Ye 4 , Shunli Wang 1 , Aiping Liu 1 , Zhengwei Chen 2 , Chaorong Li 1 , Weihua Tang 2
Affiliation
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Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction was generated by depositing a Sn-doped n-type Ga2O3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R254 nm/R400 nm = 5.9 × 103 and an ideal detectivity at 1.69 × 1013 cm·Hz1/2·W–1, which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10–11A), a high Iphoto/Idark ratio (∼104), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron–hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/Sn:Ga2O3 pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems.
中文翻译：
基于GaN / Sn：Ga 2 O 3 pn结的具有超高光敏性（3.05 A / W）的自供电紫外光电探测器
紫外线（UV）具有多种影响，包括人类健康，农作物生产和建筑物寿命。基于光伏效应，自供电的紫外线光电探测器可以测量和监控紫外线辐射，而无需消耗任何功率。然而，这些检测器当前的低光电性能阻碍了它们的实际使用。在我们的研究中，通过将掺Sn的n型Ga 2 O 3薄膜沉积到p型上，生成了基于GaN / Sn：Ga 2 O 3 pn结的超高性能自供电UV光电探测器。GaN厚膜。在没有电源的情况下，在254 nm处的响应度高达3.05 A / W，并且具有较高的UV /可见光抑制比，R 254 nm /R 400 nm = 5.9×10 3，在1.69×10 13 cm·Hz 1/2 ·W –1处具有理想的探测灵敏度，远远超出了以前的自供电式紫外线光电探测器的水平。此外，我们的设备还具有低的暗电流（1.8×10 –11 A），高的I photo / I暗比（〜10 4），以及18 ms的快速光响应时间，无偏置。这些出色的性能结果归因于在GaN / Sn：Ga 2 O 3的界面耗尽区中由高内置电场驱动的光生电子-空穴对的快速分离。pn结。我们的结果为构建高性能自供电UV光电探测器提供了一条简便易行的途径，该探测器有可能替代传统的高能耗UV探测系统。
更新日期：2018-11-28
中文翻译：
基于GaN / Sn：Ga 2 O 3 pn结的具有超高光敏性（3.05 A / W）的自供电紫外光电探测器
紫外线（UV）具有多种影响，包括人类健康，农作物生产和建筑物寿命。基于光伏效应，自供电的紫外线光电探测器可以测量和监控紫外线辐射，而无需消耗任何功率。然而，这些检测器当前的低光电性能阻碍了它们的实际使用。在我们的研究中，通过将掺Sn的n型Ga 2 O 3薄膜沉积到p型上，生成了基于GaN / Sn：Ga 2 O 3 pn结的超高性能自供电UV光电探测器。GaN厚膜。在没有电源的情况下，在254 nm处的响应度高达3.05 A / W，并且具有较高的UV /可见光抑制比，R 254 nm /R 400 nm = 5.9×10 3，在1.69×10 13 cm·Hz 1/2 ·W –1处具有理想的探测灵敏度，远远超出了以前的自供电式紫外线光电探测器的水平。此外，我们的设备还具有低的暗电流（1.8×10 –11 A），高的I photo / I暗比（〜10 4），以及18 ms的快速光响应时间，无偏置。这些出色的性能结果归因于在GaN / Sn：Ga 2 O 3的界面耗尽区中由高内置电场驱动的光生电子-空穴对的快速分离。pn结。我们的结果为构建高性能自供电UV光电探测器提供了一条简便易行的途径，该探测器有可能替代传统的高能耗UV探测系统。
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