Chemical modification of vertically aligned graphene standing on SiC microspheres for selective oxidation†,New Journal of Chemistry

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Chemical modification of vertically aligned graphene standing on SiC microspheres for selective oxidation†
New Journal of Chemistry ( IF 2.7 ) Pub Date : 2018-11-21 00:00:00 , DOI: 10.1039/c8nj05103h
Jun Ma _{1,

2,

3,

4,

5} , Yiwei Fei _{1,

2,

3} , Jianqiang Hu _{1,

2,

3} , Nan Wu _{1,

2,

3} , Shian Sun _{1,

2,

3} , Feng Xie _{1,

2,

3} , Gongyi Li _{3,

4,

5} , Xiaodong Li _{3,

4,

5} , Yuelun Wang _{2,

3,

6}

Affiliation

Vertically aligned multi-layer graphene standing on SiC microspheres could be chemically modified to prepare nitrogen doped graphene standing on SiC microspheres (NG on SiCm). The unique structure consisted of a nitrogen doped graphene layer (the lateral dimension is ∼200 nm) and a solid SiC core (the diameter is in the range from 0.2 μm to 0.8 μm). Based on XPS analysis, the nitrogen element is controllably doped in the nanostructure of the graphene layer of NG on SiCm. The NG on SiCm is found to be an effective recyclable carbocatalyst for selective oxidation reactions. Owing to the unique nanostructure of the nitrogen doped graphene grown on the inert SiC core, the nanomaterial is not only tough enough to hardly change in chemical modification reactions, but also expected to serve as a predispersed recyclable high performance carbocatalyst.

中文翻译：

垂直排列在SiC微球上的垂直取向石墨烯的化学改性以进行选择性氧化†

可以对SiC微球上垂直排列的多层石墨烯进行化学改性，以制备SiC微球上氮掺杂的石墨烯（SiCm上为NG）。独特的结构由氮掺杂石墨烯层（横向尺寸为〜200 nm）和固态SiC核（直径为0.2μm至0.8μm）组成。基于XPS分析，氮元素可控地掺杂在SiCm上NG的石墨烯层的纳米结构中。发现SiCm上的NG是一种有效的可回收碳催化剂，可用于选择性氧化反应。由于在惰性SiC核上生长的氮掺杂石墨烯的独特纳米结构，该纳米材料不仅足够坚韧，几乎不会在化学改性反应中发生变化，而且有望用作预分散的可回收高性能碳催化剂。

更新日期：2018-11-21

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