Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance,The Journal of Physical Chemistry Letters

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Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2018-11-20 00:00:00 , DOI: 10.1021/acs.jpclett.8b03074
Andrew J. Ferguson ₁ , Obadiah G. Reid _{1,

2} , Sanjini U. Nanayakkara ₁ , Rachelle Ihly ₁ , Jeffrey L. Blackburn ₁

Affiliation

Although molecular charge-transfer doping is widely used to manipulate carrier density in organic semiconductors, only a small fraction of charge carriers typically escape the Coulomb potential of dopant counterions to contribute to electrical conductivity. Here, we utilize microwave and direct-current (DC) measurements of electrical conductivity to demonstrate that a high percentage of charge carriers in redox-doped semiconducting single-walled carbon nanotube (s-SWCNT) networks is delocalized as a free carrier density in the π-electron system (estimated as >46% at high doping densities). The microwave and four-point probe conductivities of hole-doped s-SWCNT films quantitatively match over almost 4 orders of magnitude in conductance, indicating that both measurements are dominated by the same population of delocalized carriers. We address the relevance of this surprising one-to-one correspondence by discussing the degree to which local environmental parameters (e.g., tube–tube junctions, Coulombic stabilization, and local bonding environment) may impact the relative magnitudes of each transport measurement.

中文翻译：

定量微波和直流电导率探测有机半导体中电荷转移掺杂的效率

尽管分子电荷转移掺杂被广泛用于控制有机半导体中的载流子密度，但通常只有一小部分电荷载流子会逸出掺杂剂抗衡离子的库仑电势，从而有助于提高电导率。在这里，我们利用电导率的微波和直流（DC）测量来证明在氧化还原掺杂的半导体单壁碳纳米管（s-SWCNT）网络中，高百分比的电荷载流子是作为自由载流子密度而离域的。 π电子系统（在高掺杂密度下估计> 46％）。掺杂了空穴的s-SWCNT膜的微波和四点探针电导率在电导率上几乎匹配了4个数量级，这表明这两种测量方法均由相同数量的离域载流子控制。

更新日期：2018-11-20

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