Abstract We have demonstrated that the use of a one-step sputtering process allowed for the fabrication of copper indium gallium diselenide (CIGS) thin films by RF magnetron sputtering without an additional selenization process. The CIGS thin films deposited at different substrate temperatures were synthesized on soda-lime glass (SLG) substrates using a single quaternary CIGS target. The film composition ratios of ([Cu]/[In]+[Ga]), ([Ga]/[In]+[Ga]), and ([Se]/[Cu]+[In]+[Ga]) were almost consistent with those of the sputtering target. X-ray diffraction (XRD) and Raman results showed that the crystallinity of the CIGS thin films was gradually improved as substrate temperatures increased. Transmission electron microscopy (TEM) showed that the films grown at 600 °C have a columnar structure with the grain size of ~100 nm. In addition, for the CIGS films grown at 600 °C, TEM-EDX analysis revealed that the synchronized fluctuation of the Cu and Se signals was observed in the direction of the film depth, while the In and Ga signals were constant. As a result, the CIGS solar cell made using the film showed a degraded cell efficiency of 2.5%, which might be have been caused by not only Cu-rich and Se-poor compositions but the locally unstable composition in the CIGS films fabricated by one-step sputtering.

中文翻译：

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一步溅射工艺生长的 CIGS 吸收层的综合表征

摘要 我们已经证明，使用一步溅射工艺可以通过射频磁控溅射制造铜铟镓二硒 (CIGS) 薄膜，而无需额外的硒化工艺。使用单个四元 CIGS 靶在钠钙玻璃 (SLG) 基板上合成在不同基板温度下沉积的 CIGS 薄膜。([Cu]/[In]+[Ga])、([Ga]/[In]+[Ga])、([Se]/[Cu]+[In]+[Ga] ) 几乎与溅射靶的一致。X 射线衍射 (XRD) 和拉曼结果表明，随着衬底温度的升高，CIGS 薄膜的结晶度逐渐提高。透射电子显微镜 (TEM) 表明，在 600 °C 下生长的薄膜具有柱状结构，晶粒尺寸约为 100 nm。此外，对于在 600 °C 下生长的 CIGS 薄膜，TEM-EDX 分析表明，在薄膜深度方向上观察到 Cu 和 Se 信号的同步波动，而 In 和 Ga 信号是恒定的。结果，使用该薄膜制造的 CIGS 太阳能电池显示出 2.5% 的电池效率下降，这可能不仅是由富铜和贫硒的成分引起的，而且是由一种成分制造的 CIGS 薄膜中的局部不稳定成分引起的。 -步进溅射。