Abstract We report an ultraviolet (UV) electroluminescence (EL) in n-SnO2/p-ZnO heterojunction light-emitting diodes with the nanostructural SnO2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO2 layer. Our results suggest that the nanostructural SnO2/ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field.

中文翻译：

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高压合成的 Li 掺杂 ZnO 作为空穴源的纳米结构 SnO2 基异质结的紫外电致发光

摘要 我们报告了 n-SnO2/p-ZnO 异质结发光二极管中的紫外 (UV) 电致发光 (EL)，其中纳米结构的 SnO2 作为 n 型层和由高浓度合成的 Li 掺杂 ZnO (ZnO:Li)。高温高压 (HTHP) 方法作为高空穴浓度 p 型层。包括纳米带（NB）和纳米线（NW）在内的两种 SnO2 纳米结构用于在异质结中制造 n 型层。具有不同 SnO2 纳米结构的两个异质结在 EL 测量中表现出不同的发光特性。SnO2 NBs/p-ZnO 异质结在正向偏置电压下显示出以 416 nm 为中心的蓝色发射带。对于 SnO2 NWs/p-ZnO 异质结，观察到位于 391 nm 的强紫外发射峰。光致发光 (PL) 光谱表明 EL 的差异归因于纳米结构 SnO2 层中依赖于形态的发光特征。我们的研究结果表明，纳米结构的 SnO2/ZnO:Li 异质结是紫外光电子领域中一种潜在且有前景的系统。