Abstract Poly-crystalline In2O3-ZnGa2O4 nanocomposites were successfully synthesized by hydrothermal method with a mixed solution of In, Ga and Zn nitrates with equal mole ratio (In: Ga: Zn=1:1:1) and the ammonia was used as the precipitant. The effects of hydrothermal temperature and pH value of the mixed solution on the properties of the nanocomposites were investigated. The microstructure of the prepared In2O3-ZnGa2O4 nanocomposites was characterized by SEM and TEM, respectively. The growth mechanisms of In2O3-ZnGa2O4 nanocomposites were also preliminarily discussed in this study. Results reveal that the IGZO ceramics prepared by In2O3-ZnGa2O4 nanocomposites own a high relative density of 99.5% and low resistivity of 1.2 mΩ·cm, which can be applied to the preparation of IGZO thin film with superior performance.

中文翻译：

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In2O3-ZnGa2O4纳米复合材料的水热合成与表征及其在IGZO陶瓷中的应用

摘要 以等摩尔比的In、Ga、Zn硝酸盐混合溶液(In:Ga:Zn=1:1:1)，以氨为沉淀剂，采用水热法成功合成了多晶In2O3-ZnGa2O4纳米复合材料。 . 研究了混合溶液的水热温度和pH值对纳米复合材料性能的影响。分别通过SEM和TEM表征了制备的In2O3-ZnGa2O4纳米复合材料的微观结构。本研究还初步讨论了 In2O3-ZnGa2O4 纳米复合材料的生长机制。结果表明，In2O3-ZnGa2O4纳米复合材料制备的IGZO陶瓷具有99.5%的高相对密度和1.2 mΩ·cm的低电阻率，可用于制备性能优异的IGZO薄膜。