Zn_1-XPb_XS (x=0 to 0.4 in steps of 0.1) ternary semiconductor samples have been prepared by co-precipitation method. The structural, optical and electrical studies have been carried out on all these samples to understand the influence of Lead on these properties. X-ray diffractograms showed that all Zn_1-XPb_XS samples have polycrystalline nature with Hexagonal phase. The room temperature optical absorption studies revealed that energy gap decreases with increase of Pb in Zn_1-XPb_XS compounds. The temperature-dependent conductivity, measured in the range 300-4K, led to understand that the conduction mechanisms at 60K and 30K are different. The activation energies evaluated at low (300-60K) and very low temperature (60-30K) regions are 38.03-32.58meV and17.99-13.56meV respectively. Activation energy and conductivity of Zn_1-XPb_XS samples increase with the increase of Pb. The samples exhibited low freezing temperature points indicating the possibility of their use in low temperature device applications.

通过共沉淀法制备了Zn _1-X Pb _X S（x = 0至0.4，步长为0.1）三元半导体样品。已经对所有这些样品进行了结构，光学和电气研究，以了解铅对这些性能的影响。X射线衍射图表明，所有Zn _1-X Pb _X S样品均具有六方相多晶性质。室温光吸收研究表明，Zn _1-X Pb _X中的能隙随Pb的增加而减小S化合物。在300-4K范围内测得的随温度变化的电导率使人们了解到，在60K和30K时的传导机理是不同的。在低温（300-60K）和低温（60-30K）区域评估的活化能分别为38.03-32.58meV和17.99-13.56meV。Zn _1-X Pb _X S样品的活化能和电导率随Pb的增加而增加。样品显示出较低的冷冻温度点，表明它们可能在低温设备应用中使用。