Abstract Zn, Cr dual doped CdS quantum dots (QDs) have been synthesized using co-precipitation method at room temperature without any capping agent. The prepared samples were analyzed by x-ray diffraction (XRD), Transmission electron microscopic (TEM) study, Scanning electron microscopic (SEM) study, Energy Dispersive X-ray (EDX) spectra, UV–Visible absorption & transmission spectra, Fourier Transform Infra-Red (FTIR) spectra and Photoluminescence studies (PL). All the samples were exhibited cubic structure and they confirmed that the presence of Cr did not alter the original structure. TEM study and SEM study revealed the structure and morphology of the particles. Crystallite size was reduced for the addition of Cr and it was ranged as ~2 nm. As large number of small particles aggregated on the surface, agglomeration was received on surface morphological study. EDX spectra confirmed the occurrence of doped elements in CdS as per the targeted ratio. In UV–visible absorption study, Cr doping caused blue shift on absorption peaks. UV–visible transmittance peaks intensity was reduced as a function of Cr doping. Optical energy band gap value was slightly increased for the addition of Cr. High intense blue light emission and red shifted red emission were received on PL study for the Cr, Zn dual doped CdS QDs. Since these materials offered better optical and luminescent properties, shall be suitable for the opto-electronic device applications.

中文翻译：

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Cd0.9-xZn0.1CrxS(0 ≤ x ≤0.05) 量子点上增强的蓝光发射

摘要 Zn、Cr ​​双掺杂 CdS 量子点 (QDs) 在室温下使用共沉淀法合成，无需任何封端剂。通过 X 射线衍射 (XRD)、透射电子显微镜 (TEM) 研究、扫描电子显微镜 (SEM) 研究、能量色散 X 射线 (EDX) 光谱、紫外-可见吸收和透射光谱、傅立叶变换分析制备的样品红外 (FTIR) 光谱和光致发光研究 (PL)。所有样品均呈现立方结构，并且证实了 Cr 的存在不会改变原始结构。TEM 研究和 SEM 研究揭示了颗粒的结构和形态。添加Cr后微晶尺寸减小，其范围为~2nm。由于大量的小颗粒聚集在表面，在表面形态学研究中收到团聚。EDX 光谱证实了 CdS 中按目标比例存在掺杂元素。在紫外-可见吸收研究中，Cr 掺杂导致吸收峰蓝移。作为 Cr 掺杂的函数，UV-可见光透射峰强度降低。添加Cr后，光能带隙值略有增加。在 PL 研究中，Cr、Zn 双掺杂 CdS QD 获得了高强度蓝光发射和红移红光发射。由于这些材料具有更好的光学和发光特性，因此适用于光电器件应用。作为 Cr 掺杂的函数，UV-可见光透射峰强度降低。添加Cr后光能带隙值略有增加。在 PL 研究中，Cr、Zn 双掺杂 CdS QD 获得了高强度蓝光发射和红移红光发射。由于这些材料具有更好的光学和发光特性，因此适用于光电器件应用。作为 Cr 掺杂的函数，UV-可见光透射峰强度降低。添加Cr后光能带隙值略有增加。在 PL 研究中，Cr、Zn 双掺杂 CdS QD 获得了高强度蓝光发射和红移红光发射。由于这些材料具有更好的光学和发光特性，因此适用于光电器件应用。