Highly conductive SiC-MoSi₂-AlN composites were fabricated by β-SiC, AlN and MoSi₂ powders with Y₂O₃ additive via pressureless sintering. The effect of MoSi₂ content on the microstructure, mechanical and electrical properties of SiC-MoSi₂-AlN composites was systematically investigated. A finer microstructure was obtained and electrical conductivity was enhanced with increasing MoSi₂ content. The impedance spectroscopy and potential-current measurements were implemented to figure out the electrical conduction mechanism. The introduction of MoSi₂ effectively reduced the Schottky barrier height at the grain boundary, and subsequently the U-I curves changed from nonlinear to linear electrical characteristics. The notable decrease in electrical resistivity was owing to the breakdown of grain boundaries and the formation of percolation paths. The percolation threshold was in the range of 0–5.44 vol% MoSi₂, much lower than the reference value. The composites with 10 wt% MoSi₂ exhibited an electrical resistivity of about 60 Ω cm, suitable for infrared source element applications.

通过β-SiC，AlN和MoSi ₂粉末与Y ₂ O ₃添加剂通过无压烧结制备高导电性SiC-MoSi ₂ -AlN复合材料。系统地研究了MoSi ₂含量对SiC-MoSi ₂ -AlN复合材料的组织，力学性能和电性能的影响。随着MoSi ₂含量的增加，获得了更精细的微观结构并提高了电导率。进行了阻抗谱和势电流测量以找出导电机理。MoSi ₂的介绍有效地降低了晶界处的肖特基势垒高度，随后UI曲线从非线性电特性变为线性电特性。电阻率的显着下降是由于晶界的破坏和渗流路径的形成。渗滤阈值在MoSi ₂的0–5.44 vol％范围内，远低于参考值。具有10 wt％MoSi ₂的复合材料表现出约60Ωcm的电阻率，适用于红外源元件应用。