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Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability
Faraday Discussions ( IF 3.3 ) Pub Date : 2018-11-12 , DOI: 10.1039/c8fd00125a
Yago Gonzalez-Velo 1, 2, 3, 4, 5 , Arshey Patadia 1, 2, 3, 4, 5 , Hugh J. Barnaby 1, 2, 3, 4, 5 , Michael N. Kozicki 1, 2, 3, 4, 5
Affiliation  

Chalcogenide-based, programmable metallization cells (PMC) cells have been characterized after exposure to increasing levels of absorbed dose (i.e., ionizing radiation exposure). We found, and show here for the first time, that total absorbed dose effects induce a slight modification of the switching phenomena with a moderate increase of the programmable low resistance state (LRS) of the PMCs after repeated switching depending on the processing conditions, while it does not impact the state programmed before exposure. We also show that an increase of the programmable high resistance state (HRS) occurs with irradiation. Such observations are discussed through correlation with crystallization observed in the concurrent X-ray diffraction (XRD) characterization of representative thin-film stacks of the PMCs. These new results are compared to previous results obtained on chalcogenide-based PMCs that did not identify/observe such effects.

中文翻译:

辐射诱导结晶对可编程金属化电池电气特性和可靠性的影响

基于硫属化物的可编程金属化电池(PMC)电池在暴露于不断增加的吸收剂量水平(,电离辐射暴露)。我们发现并首次显示,总的吸收剂量效应会引起开关现象的轻微改变,并根据处理条件的反复开关后,PMC的可编程低电阻状态(LRS)适度增加,而它不会影响曝光前编程的状态。我们还表明,随着辐照发生可编程高阻态(HRS)的增加。通过与在代表性的PMC薄膜叠层的同时X射线衍射(XRD)表征中观察到的结晶相关性来讨论此类观察。将这些新结果与以前基于硫属化物的PMC所获得的结果进行了比较,而后者并未发现/观察到这种影响。
更新日期:2019-02-19
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