N-Doped Mesoporous Graphene with Superior Capacitive Behaviors Derived from Chemical Vapor Deposition Methodology in the Fluidized Bed Reactor,Industrial & Engineering Chemistry Research

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N-Doped Mesoporous Graphene with Superior Capacitive Behaviors Derived from Chemical Vapor Deposition Methodology in the Fluidized Bed Reactor
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2018-11-13 , DOI: 10.1021/acs.iecr.8b03498
Xinlong Ma ₁ , Zhiqing Yu ₁ , Lei Zhao ₁ , Xinyu Song ₂ , Lu Zhao ₁ , Xuejie Wang ₁ , Zhihua Xiao ₁ , Guoqing Ning ₁ , Jinsen Gao ₁

Affiliation

Template-directed N-doped mesoporous graphene (NMG) is obtained by the chemical vapor deposition methodology in a fluidized bed reactor using C₂H₄ and NH₃ as carbon source and dopant, respectively. The in situ N incorporation into the carbon framework can be achieved along with the growth of graphene, guaranteeing the uniformity of N doping. In the Li-based half-cell systems, NMG electrode exhibits outstanding electrochemical behaviors in view of the cathode and anode, respectively, which is superior to those of the corresponding activated carbon cathode and undoped MG anode. Benefiting from the tremendous mesoporous channels and N doping, the lithium-ion capacitor configured with NMG as cathode and anode presents superior capacitive energy-storage behaviors with respect to the capacitance, energy density, power density and durability. This work provides a good strategy of the combination of structure control and N doping to obtain the high-performance electrode material for capacitive energy-storage devices.

中文翻译：

流化床反应器中化学气相沉积方法获得的具有优异电容性能的N掺杂介孔石墨烯

在C ₂ H ₄和NH ₃的流化床反应器中，通过化学气相沉积法获得模板导向的N掺杂介孔石墨烯（NMG）。分别作为碳源和掺杂剂。随着石墨烯的生长，可以实现将原位N掺入碳骨架中，从而确保N掺杂的均匀性。在基于锂的半电池系统中，NMG电极分别在阴极和阳极方面表现出出色的电化学性能，优于相应的活性炭阴极和未掺杂的MG阳极。受益于巨大的介孔通道和N掺杂，以NMG作为阴极和阳极的锂离子电容器在电容，能量密度，功率密度和耐用性方面表现出优异的电容性储能性能。

更新日期：2018-11-13

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