Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy†,Nanoscale

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Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy†
Nanoscale ( IF 5.8 ) Pub Date : 2018-11-01 00:00:00 , DOI: 10.1039/c8nr07307d
Jian Shen _{1,

2,

3,

4,

5} , Yulin Zheng _{1,

2,

3,

4,

6} , Zhenzhu Xu _{1,

2,

3,

4,

6} , Yuefeng Yu _{1,

2,

3,

4,

6} , Fangliang Gao _{1,

2,

3,

4,

6} , Shuguang Zhang _{1,

2,

3,

4,

6} , Yang Gan _{4,

5,

7,

8} , Guoqiang Li _{1,

2,

3,

4,

6}

Affiliation

A low-cost, high-efficiency, and catalyst-free method for fabricating well-aligned and uniform semipolar InGaN nanorods (NRs) by molecular beam epitaxy (MBE) is proposed using an optimized patterned sapphire substrate (PSS) with high Miller index crystallographic planes. The dense, obliquely aligned, and high-quality semipolar (1 [1 with combining macron]

02) InGaN NRs are fabricated on hexagonal pyramid arrays of the PSS for the first time in this work. A unique semipolar (1 [1 with combining macron]

02) and polar (0001) InGaN NR array composite structure is thus achieved on a hexagonal pyramid PSS. The connected, uniform, and obliquely aligned NRs are formed on the PSS with cylindrical arrays. The cylindrical and hexagonal pyramid arrays of PSSs are structured by the standard photolithography process and etching techniques. Both pattern topography and crystallographic plane of the PSS significantly affect the morphology, dimension, and crystallographic orientation of InGaN NRs. It is clearly demonstrated that the PSS with exposed high Miller index crystallographic planes, with well-organized step-terrace structures, facilitates the growth of ordered and dense semipolar InGaN NRs. This work contributes to the thorough understanding of the nucleation and growth mechanisms of InGaN NRs on a high Miller index plane of the PSS with different topographies, as well as of those of controllably fabricating dense and uniform semipolar NRs, thus facilitating the fabrication of NR-based optoelectronic devices with enhanced performance.

中文翻译：

通过分子束外延法在图案化的蓝宝石衬底上生长半极性InGaN纳米棒的晶面和形貌相关的†

提出了一种低成本，高效且无催化剂的方法，该方法利用具有高米勒指数晶体学的优化图案化蓝宝石衬底（PSS），通过分子束外延（MBE）来制造排列整齐且均匀的半极性InGaN纳米棒（NRs）飞机。 [1个结合宏]

在这项工作中，首次在PSS的六边形金字塔阵列上制造了致密，倾斜排列且高质量的半极性（1 02）InGaN NR。独特的半极性（1 [1个结合宏]

因此，在六棱锥PSS上实现了极性（0001）和极性（0001）的InGaN NR阵列复合结构。连接的，均匀且倾斜对齐的NR在带有圆柱阵列的PSS上形成。PSS的圆柱形和六边形金字塔阵列通过标准的光刻工艺和蚀刻技术构造而成。PSS的图案形貌和结晶平面都会显着影响InGaN NR的形态，尺寸和结晶取向。清楚地证明，具有暴露的高米勒指数晶体平面和良好组织的阶跃结构的PSS促进了有序且致密的半极性InGaN NR的生长。

更新日期：2018-11-01

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