Fabrication of sub-20 nm patterns using dopamine chemistry in self-aligned double patterning†,Nanoscale

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Fabrication of sub-20 nm patterns using dopamine chemistry in self-aligned double patterning†
Nanoscale ( IF 5.8 ) Pub Date : 2018-10-19 00:00:00 , DOI: 10.1039/c8nr04040k
Yinyong Li _{1,

2,

3} , Jaewon Choi _{1,

2,

3} , Zhiwei Sun _{1,

2,

3} , Thomas P. Russell _{1,

2,

3} , Kenneth R. Carter _{1,

2,

3}

Affiliation

A self-aligned double patterning approach using a dopamine chemistry-inspired coating technique has been developed for the fabrication of sub-20 nm patterns. Poly(methyl methacrylate) (PMMA) films were patterned by nanoimprint lithography to form relief features. A thin layer of polydopamine (PDA) was conformally deposited on the surface of the PMMA pattern sidewalls to form a spacer layer. After etching the surface of the PDA layer from the horizontal surfaces and subsequently removing the PMMA template, free-standing PDA sidewall patterns remained that essentially doubled the original PMMA pattern density with decreased feature dimensions as compared to the initial PMMA template structures. The critical dimension of the PDA patterns can be tuned to ∼20 nm by controlling the PDA deposition conditions and further reduced to ∼13 nm by thermal carbonization of the PDA. Both simple lines and more complex rhombic ring features were fabricated by this technique to demonstrate its capacity for replicating arbitrary patterns. This work represents a simple and scalable strategy for preparing well-defined nanostructures with feature sizes usually only accessible via complex leading edge lithographic methods.

中文翻译：

使用多巴胺化学在自对准双图案中制造20 nm以下的图案†

已经开发出一种使用多巴胺化学启发的涂层技术的自对准双图案化方法，用于制造20 nm以下的图案。通过纳米压印光刻对聚甲基丙烯酸甲酯（PMMA）膜进行构图，以形成浮雕特征。聚多巴胺薄层（PDA）共形沉积在PMMA图案侧壁的表面上，以形成隔离层。在从水平表面蚀刻PDA层的表面并随后去除PMMA模板之后，与初始PMMA模板结构相比，保留了独立的PDA侧壁图案，该侧壁实质上使原始PMMA图案密度增加了一倍，而特征尺寸却减小了。通过控制PDA的沉积条件，可以将PDA图案的临界尺寸调整到约20 nm，并且通过PDA的热碳化将其减小到约13 nm。通过此技术既可以制作简单的线条，也可以制作更复杂的菱形环特征，以展示其复制任意图案的能力。这项工作代表了一种简单且可扩展的策略，用于制备特征尺寸通常只能访问的定义明确的纳米结构通过复杂的前沿光刻方法。

更新日期：2018-10-19

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