Activating the MoS2 Basal Plane by Controllable Fabrication of Pores for an Enhanced Hydrogen Evolution Reaction,Chemistry - A European Journal

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Activating the MoS2 Basal Plane by Controllable Fabrication of Pores for an Enhanced Hydrogen Evolution Reaction
Chemistry - A European Journal ( IF 3.9 ) Pub Date : 2018-11-16 , DOI: 10.1002/chem.201804658
Shuo Geng ₁ , Hu Liu ₁ , Weiwei Yang ₁ , Yong Sheng Yu ₁

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Molybdenum disulfide has drawn persistent interest as a promising nonprecious electrocatalyst alternative to Pt for the hydrogen evolution reaction (HER). However, the MoS₂ catalytic efficiency is still lower than the Pt‐based catalysts owing to insufficient active sites with more inert basal planes. Herein, we designed and synthesized porous MoS₂ nanosheets to activate the basal planes by etching away Al in Al‐doped MoS₂. The optimized porous MoS₂ shows a small onset overpotential as low as 136 mV, a large cathode current density of 10 mA cm⁻² at η=201 mV, a low Tafel slope of 62 mV decade⁻¹, and a high TOF of 0.29 H₂ s⁻¹ per active site at η=200 mV. This study opens up new avenues for designing electrocatalysts based on porous MoS₂ or other layered materials with enhanced HER performance.

中文翻译：

通过孔的可控制造来激活MoS2基平面以增强氢释放反应

二硫化钼作为一种有前途的非贵金属电催化剂，可用于制氢反应（HER）的替代品，引起了人们的持续关注。但是，由于活性位点不足且具有更多的惰性基面，因此MoS _2的催化效率仍低于Pt基催化剂。在这里，我们设计并合成了多孔MoS ₂纳米片，通过蚀刻掉掺Al的MoS ₂中的Al来激活基面。优化的多孔MoS ₂表现出低至136 mV的小起始过电位，在η = 201 mV时的10 mA cm ^-2的大阴极电流密度，62 mV October ^-1的低Tafel斜率和0.29的高TOF高₂ 秒η = 200 mV时每个活性位点^-1。这项研究为基于多孔MoS ₂或具有增强HER性能的其他层状材料设计电催化剂开辟了新途径。

更新日期：2018-11-16

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