Highly (00l)-oriented Bi2Te3/Te heterostructure thin films with enhanced power factor,Nanoscale

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Highly (00l)-oriented Bi2Te3/Te heterostructure thin films with enhanced power factor
Nanoscale ( IF 5.8 ) Pub Date : 2018-10-18 00:00:00 , DOI: 10.1039/c8nr07112h
Hong-Jing Shang _{1,

2,

3,

4,

5} , Fa-Zhu Ding _{1,

2,

3,

4,

5} , Yuan Deng _{4,

6,

7,

8} , He Zhang _{2,

3,

4,

5,

9} , Ze-Bin Dong _{1,

2,

3,

4,

5} , Wen-Juan Xu _{1,

2,

3,

4,

5} , Da-Xing Huang _{1,

2,

3,

4,

5} , Hong-Wei Gu _{1,

2,

3,

4,

5} , Zhi-Gang Chen _{10,

11,

12,

13,

14}

Affiliation

Introducing nanoscale heterostructure interfaces into material matrix is an effective strategy to optimize the thermoelectric performance by energy-dependent carrier filtering effect. In this study, highly (00l)-oriented Bi₂Te₃/Te heterostructure thin films have been fabricated on single-crystal MgO substrates using a facile magnetron co-sputtering method. Bi₂Te₃/Te heterostructure thin films with Te contents of 63.8 at% show an optimized thermoelectric performance, which possess a Seebeck coefficient of −157.7 μV K⁻¹ and an electrical conductivity of 9.72 × 10⁴ S m⁻¹, leading to a high power factor approaching 25 μW cm⁻¹ K⁻². The partially decoupled behavior of the Seebeck coefficient and electrical conductivity is contributed to Bi₂Te₃/Te heterostructure interfaces, which causes interfacial barrier filtering and scattering effects; thus, a high level of the Seebeck coefficient is obtained. Meanwhile, carrier transport in a–b plane can benefit from the highly preferred orientation, which guarantees a remarkably high electrical conductivity. We anticipate that our strategy may guide the way for preparing high-performance thermoelectric materials by microstructure design and regulation.

中文翻译：

高（00 l）取向的Bi ₂ Te ₃ / Te异质结构薄膜，具有提高的功率因数

将纳米级异质结构界面引入材料基质是通过依赖于能量的载流子过滤效应来优化热电性能的有效策略。在这项研究中，已经使用一种容易的磁控共溅射方法在单晶MgO衬底上制备了高度（00 l）取向的Bi ₂ Te ₃ / Te异质结构薄膜。Te含量为63.8 at％的Bi ₂ Te ₃ / Te异质结构薄膜表现出最佳的热电性能，其塞贝克系数为-157.7μVK ^-1，电导率为9.72×10 ⁴ S m ^-1，导致接近25μWcm的高功率因数^-1 K^-2。Seebeck系数和电导率的部分解耦行为有助于Bi₂ Te₃ / Te异质结构界面，从而导致界面势垒过滤和散射效应。因此，获得了高水平的塞贝克系数。同时，在a - b平面中的载流子传输可受益于高度首选的方向，这可确保显着高的电导率。我们预计，我们的策略可以通过微观结构设计和法规指导制备高性能热电材料的方法。

更新日期：2018-10-18

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