Crystallization Control of Organic Semiconductors during Meniscus‐Guided Coating by Blending with Polymer Binder,Advanced Functional Materials

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Crystallization Control of Organic Semiconductors during Meniscus‐Guided Coating by Blending with Polymer Binder
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-10-16 , DOI: 10.1002/adfm.201805594
Ke Zhang ₁ , Tomasz Marszalek _{1,

2} , Philipp Wucher ₃ , Zuyuan Wang ₁ , Lothar Veith ₁ , Hao Lu ₁ , Hans‐Joachim Räder ₁ , Pierre M. Beaujuge ₃ , Paul W. M. Blom ₁ , Wojciech Pisula _{1,

2}

Affiliation

Small molecule organic semiconductors (OSCs) suffer from their uncontrolled nucleation and growth during solution processing limiting their functionality in electronic devices. In this work, a new method is presented based on dip‐coating a blend consisting of OSC and insulating polymer to control the crystallization of the active film for organic field‐effect transistors. A small fraction of amorphous poly(methyl methacrylate) (PMMA) efficiently improves the crystallization of dip‐coated small molecule OSCs, α,ω‐dihexylquaterthiophene (DH4T) and diketopyrrolopyrrole‐sexithiophene (DPP6T). The maximum charge carrier mobilities of dip‐coated OSC:PMMA films are significantly higher than drop‐cast blend ones and comparable with OSC single crystals. The high charge carrier mobility originates from a continuous alignment of the crystalline films and stratified OSC and PMMA layers. The improved crystallization is attributed to two mechanisms: first, the polymer binder leads to a viscosity gradient at the meniscus during dip‐coating, facilitating the draw of solute and thus mass transport. Second, the polymer binder solidifies at the bottom layer, reducing the nucleation barrier height of small molecule OSC. The findings demonstrate that a small fraction of a polymer binder during dip‐coating efficiently improves the crystallization as well as the electronic properties of small molecule OSC films.

中文翻译：

弯月面涂料与聚合物粘合剂共混过程中有机半导体的结晶控制

小分子有机半导体（OSC）在溶液处理过程中遭受不受控制的成核和生长，从而限制了它们在电子设备中的功能。在这项工作中，提出了一种新方法，该方法基于浸涂由OSC和绝缘聚合物组成的混合物，以控制有机场效应晶体管的有源膜的结晶。一小部分无定形聚甲基丙烯酸甲酯（PMMA）可有效改善浸涂小分子OSC，α，ω-二己基四噻吩（DH4T）和二酮吡咯并吡咯-sethiothiophene（DPP6T）的结晶。浸涂式OSC：PMMA薄膜的最大电荷载流子迁移率显着高于滴铸混合膜，可与OSC单晶媲美。高电荷载流子迁移率源自结晶膜和分层的OSC和PMMA层的连续排列。改善的结晶归因于两种机理：首先，聚合物粘合剂在浸涂过程中导致弯月面处的粘度梯度，从而促进了溶质的吸收，从而促进了质量传递。其次，聚合物粘合剂在底层固化，从而降低了小分子OSC的成核势垒高度。研究结果表明，浸涂过程中的一小部分聚合物粘合剂可有效改善小分子OSC膜的结晶度和电子性能。促进溶质的吸收，从而促进大众运输。其次，聚合物粘合剂在底层固化，从而降低了小分子OSC的成核势垒高度。研究结果表明，浸涂过程中的一小部分聚合物粘合剂可有效改善小分子OSC膜的结晶度和电子性能。促进溶质的吸收，从而促进大众运输。其次，聚合物粘合剂在底层固化，从而降低了小分子OSC的成核势垒高度。研究结果表明，浸涂过程中的一小部分聚合物粘合剂可有效改善小分子OSC膜的结晶度和电子性能。

更新日期：2018-10-16

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