Fermi Level Positions and Induced Band Bending at Single Crystalline Anatase (101) and (001) Surfaces: Origin of the Enhanced Photocatalytic Activity of Facet Engineered Crystals,Advanced Energy Materials

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Fermi Level Positions and Induced Band Bending at Single Crystalline Anatase (101) and (001) Surfaces: Origin of the Enhanced Photocatalytic Activity of Facet Engineered Crystals
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2018-10-14 , DOI: 10.1002/aenm.201802195
Shun Kashiwaya _{1,

2} , Thierry Toupance ₁ , Andreas Klein ₂ , Wolfram Jaegermann ₂

Affiliation

Single crystalline anatase is used to prepare well defined (001) and (101) surfaces in ultrahigh vacuum (UHV) in different states: sputtered, annealed, stoichiometric, and oxidized. The electronic properties of the well‐defined surfaces are investigated by X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy after UHV transfer. The Fermi level of (001) facets for all applied surface conditions is lower than that of the (101) facets by 150–450 meV. The energy difference leads to a potential difference (band bending) at the interface between the (101) and (001) facets, resulting in the migration of photogenerated electrons and holes to different directions namely to the (101) and (001) facets, respectively. Photoelectron spectroscopy measurements clearly indicate for the first time that differences in the surface electronic structure and related potential of different facets explain a vectorial electron–hole pair separation to different reaction sites providing design criteria for enhanced photocatalysis.

中文翻译：

单晶锐钛矿（101）和（001）表面上的费米能级位置和诱导的带弯曲：刻面工程晶体增强的光催化活性的起源

单晶锐钛矿用于在不同状态的超高真空（UHV）中制备轮廓分明的（001）和（101）表面：溅射，退火，化学计量和氧化状态。UHV转移后，通过X射线光电子能谱和紫外光电子能谱研究了定义明确的表面的电子性质。在所有施加的表面条件下，（001）刻面的费米能级比（101）刻面的费米能级低150–450 meV。能量差导致（101）和（001）小平面之间的界面处出现电势差（能带弯曲），从而导致光生电子和空穴向不同方向（即向（101）和（001）小平面）迁移，分别。

更新日期：2018-10-14

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