Kinetics of Graphene and 2D Materials Growth,Advanced Materials

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Kinetics of Graphene and 2D Materials Growth
Advanced Materials ( IF 27.4 ) Pub Date : 2018-10-15 , DOI: 10.1002/adma.201801583
Jichen Dong ₁ , Leining Zhang _{1,

2} , Feng Ding _{1,

2}

Affiliation

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment‐limited growth and diffusion‐limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double‐layer and few‐layer 2D materials' growth, which has distinct features different from the growth of single‐layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

中文翻译：

石墨烯的动力学和二维材料的生长

在过去的十年中，在2D材料的化学气相沉积（CVD）生长方面取得了令人瞩目的成就，但是对基本机理的理解仍然相对有限。在此，回顾了对2D材料（尤其是其CVD合成）的生长动力学的理解的最新进展。为了完整地展示2D材料的生长动力学，讨论了以下因素：i）两种生长模式，即附着受限的生长和扩散受限的生长；ii）蚀刻2D材料，这为生长控制提供了额外的自由度；iii）石墨烯CVD合成中的许多实验因素，例如衬底的结构，氢或氧的压力，温度等，被发现对生长动力学有深远影响；iv）双层和几层2D材料的生长，其特征与单层2D材料的生长不同；v）通过几个单晶域的合并来生长多晶2D材料。最后，总结了未来2D材料合成中的当前挑战和机遇。

更新日期：2018-10-15

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