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Halide Perovskites: Organic–Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses (Adv. Mater. 42/2018)
Advanced Materials ( IF 29.4 ) Pub Date : 2018-10-15 , DOI: 10.1002/adma.201870317
Jaeho Choi 1 , Ji Su Han 1 , Kootak Hong 1 , Soo Young Kim 2 , Ho Won Jang 1
Affiliation  

In article number 1704002, Soo Young Kim, Ho Won Jang, and co‐workers review recent advances in halide perovskite (HP)‐based resistive‐switching memory, transistors, and artificial synapses. The inherently exotic properties of HPs are also covered and the various fabrication techniques of HP thin films from solution‐based methods to vacuum processes are discussed, suggesting a new material platform for future electronic devices.
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中文翻译:

卤化物钙钛矿:用于记忆,晶体管和人工突触的有机-无机杂化钙钛矿(Adv。Mater。42/2018)

Soo Young Kim,Ho Won Jang及其同事在文章编号1704002中回顾了基于卤化钙钛矿(HP)的电阻式开关记忆,晶体管和人工突触的最新进展。还涵盖了HP固有的奇异特性,并讨论了从基于溶液的方法到真空工艺的HP薄膜的各种制造技术,为未来的电子设备提供了一个新的材料平台。
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更新日期:2018-10-15
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