Boosting the Thermoelectric Performance of Pseudo‐Layered Sb2Te3(GeTe)n via Vacancy Engineering,Advanced Science

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Boosting the Thermoelectric Performance of Pseudo‐Layered Sb2Te3(GeTe)n via Vacancy Engineering
Advanced Science ( IF 14.3 ) Pub Date : 2018-10-12 , DOI: 10.1002/advs.201801514
Xiao Xu ₁ , Lin Xie ₁ , Qing Lou ₁ , Di Wu _{1,

2} , Jiaqing He ₁

Affiliation

An ultrahigh figure of merit ZT value ≈2.4 at 773 K for p‐type pseudo‐layered Sb₂Te₃(GeTe)₁₇ along the parallel direction is reported by synergistically optimizing its electrical and thermal properties via vacancy engineering. The microstructural origin of thermoelectric property enhancement is studied by spherical aberration corrected transmission electron microscopy and its in situ mode. The results reveal that upon annealing, Ge vacancy gaps in quenched samples tend to migrate and recombine into long‐range gaps in order to minimize the elastic and electrostatic energies. The recombination of Ge gaps would lead to an overall reduction of carrier concentration and electrical thermal conductivity. The detailed study of Ge vacancies migration via heat treatment and its effects on thermoelectric performance in pseudo‐layered Sb₂Te₃(GeTe)₁₇ materials can provide enlightening clues for future research in a number of thermoelectric materials of similar structures.

中文翻译：

通过空位工程提高赝层状Sb2Te3(GeTe)n的热电性能

通过空位工程协同优化其电学和热学性质，p型赝层状Sb ₂ Te ₃ (GeTe) ₁₇沿平行方向的超高品质因数ZT值在773 K时约为2.4。通过球差校正透射电子显微镜及其原位模式研究了热电性能增强的微观结构起源。结果表明，退火后，淬火样品中的 Ge 空位间隙往往会迁移并重新组合成长程间隙，以最大限度地减少弹性能和静电能。 Ge间隙的复合将导致载流子浓度和电热导率总体降低。赝层状Sb ₂ Te ₃ (GeTe) ₁₇材料中Ge空位迁移及其对热电性能影响的详细研究可以为未来研究许多类似结构的热电材料提供启发性线索。

更新日期：2018-10-12

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