An environmentally friendly and solvent-free method was reported for fabrication of ferroelectric copolymer P(VDF-TrFE) thin films directly from their molten mass. Friction-transferred poly(tetrafluoroethylene) (PTFE) templates were used for epitaxy during solidification process. The obtained films showed highly-oriented crystallite structure and improved degree of crystallinity. Electrical measurement indicated that these films presented good ferroelectric property with remnant polarization comparable to those solution deposited and epitaxially processed films. A ferroelectric field effect transistor (FeFET) was constructed with one oxide semiconductor as an active layer and P(VDF-TrFE) as a ferroelectric layer. The memory device showed an ON/OFF ratio as high as 10⁵ and good retention performance during the whole experimental duration. This work developed a new route for environmentally friendly fabrication of organic ferroelectric devices.

据报道，一种直接从熔融物制造铁电共聚物P（VDF-TrFE）薄膜的环保且无溶剂的方法。摩擦转移的聚四氟乙烯（PTFE）模板在凝固过程中用于外延。所获得的膜显示出高度取向的微晶结构和改善的结晶度。电学测量表明，这些膜具有良好的铁电性能，其剩余极化可与那些溶液沉积和外延处理的膜相比。用一个氧化物半导体作为有源层并用P（VDF-TrFE）作为铁电层构造铁电场效应晶体管（FeFET）。存储设备的开/关比高达10 ⁵在整个实验期间保持良好的性能。这项工作为有机铁电器件的环保制造开辟了一条新途径。