Future flexible electronic systems require memory devices combining low power consumption and mechanical bendability. However, high programming/erasing (P/E) voltages, which are universally required to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a novel route to achieve a low-voltage programmable/erasable flexible Fe-OFET NVM. Ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)], rather than the conventional ferroelectric copolymer poly(vinylidene-fluoride-trifluoroethylene) [P(VDF-TrFE)], is used as the gate dielectric. The low coercive field of P(VDF-TrFE-CTFE) is the main contribution to the low-voltage operation in the Fe-OFET NVM, even with a relative thick ferroelectric gate dielectric layer. By depositing a long-chain alkane molecule Tetratetracontane (TTC) as the passivation layer on the surface of P(VDF-TrFE-CTFE) film, the layer-by-layer growth mode of semiconductor pentacene is obtained, which results in a large crystalline grain and good interface morphology at the channel/dielectric. Therefore, the mobility of Fe-OFET NVMs is greatly improved. As a result, a high performance flexible Fe-OFET NVM is achieved, with a low P/E voltage of ±15 V, high mobility up to 0.5 cm² V⁻¹ s⁻¹, reliable P/E endurance property over 1000 cycles, stable data storage retention capability over 6000 s, and excellent mechanical bending durability without visible degradation after 2000 repetitive tensile bending cycles at a small curvature radius of 4.0 mm.

未来的柔性电子系统需要兼具低功耗和机械可弯曲性的存储设备。但是，通常需要高编程/擦除（P / E）电压来切换先前报告的铁电有机场效应晶体管（Fe-OFET）非易失性存储器（NVM）中的存储状态，这严重地阻止了它们的实际应用。在这项工作中，我们开发了一种新颖的途径来实现低压可编程/可擦除柔性Fe-OFET NVM。铁电三元共聚物聚（偏二氟乙烯-三氟乙烯-三氟氯乙烯）[P（VDF-TrFE-CTFE）]，而不是常规的铁电共聚物聚偏二氟乙烯-三氟乙烯[P（VDF-TrFE）]，栅极电介质。即使具有相对较厚的铁电栅极介电层，P（VDF-TrFE-CTFE）的低矫顽场也是Fe-OFET NVM中低压工作的主要贡献。通过在P（VDF-TrFE-CTFE）膜表面上沉积长链烷烃分子四丁烷（TTC）作为钝化层，可以获得半导体并五苯的逐层生长模式，从而导致较大的结晶度沟道/介电层具有良好的晶粒和良好的界面形态。因此，Fe-OFET NVM的迁移率大大提高。结果，实现了高性能柔性Fe-OFET NVM，P / E电压低至±15 V，迁移率高达0.5 cm 通过在P（VDF-TrFE-CTFE）膜表面上沉积长链烷烃分子四丁烷（TTC）作为钝化层，可以获得半导体并五苯的逐层生长模式，从而导致较大的结晶度沟道/介电层具有良好的晶粒和良好的界面形态。因此，Fe-OFET NVM的迁移率大大提高。结果，实现了高性能柔性Fe-OFET NVM，P / E电压低至±15 V，迁移率高达0.5 cm 通过在P（VDF-TrFE-CTFE）膜表面上沉积长链烷烃分子四丁烷（TTC）作为钝化层，可获得半导体并五苯的逐层生长模式，从而导致大的结晶度沟道/介电层具有良好的晶粒和良好的界面形态。因此，Fe-OFET NVM的迁移率大大提高。结果，实现了高性能柔性Fe-OFET NVM，P / E电压低至±15 V，迁移率高达0.5 cm²  V ^-1  s ^-1，在1000次循环中具有可靠的P / E耐久性能，在6000 s以上具有稳定的数据存储保持能力，以及优异的机械弯曲耐久性，在4.0 mm的小曲率半径下进行了2000次重复拉伸弯曲循环后，无明显退化。