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Enhanced Interfacial Adhesion and Thermal Stability in Bismuth Telluride/Nickel/Copper Multilayer Films with Low Electrical Contact Resistance
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-10-10 , DOI: 10.1002/admi.201801279
Xudong Zhu 1 , Lili Cao 1 , Wei Zhu 1 , Yuan Deng 1, 2
Affiliation  

The interfacial property between thermoelectric films and metal electrodes greatly affects the performance and practical application of thin‐film thermoelectric devices. Here, Ni intermediate layer is chosen and inserted into Bi2Te3/Cu to simultaneously regulate the electrical and mechanical performance of the interface. Meanwhile, Ar/H2 plasma cleaning is also adopted to optimize the interfacial connection during the sputtering process. Results show the interfacial element diffusion can be effectively blocked after the introduction of Ni interlayer, and the Bi2Te3/Ni/Cu multilayer thin film performs an excellent interfacial adhesion and maintains a low specific contact resistivity about 2.7 × 10−6 Ω cm2, which can be attributed to the matching of thermal expansion coefficient between Bi2Te3, Ni, and Cu, and the reduction of lattice mismatch. Furthermore, the Ni interlayer can also alleviate the degradation of interfacial mechanical and electrical properties after 1000 cycles of thermal shock, consequently enhancing the reliability and stability of the interfacial connection. This work provides an effective way to improve the comprehensive performance of multilayer interface in thin‐film thermoelectric devices.

中文翻译:

具有低电接触电阻的碲化铋/镍/铜多层薄膜的界面粘合性和热稳定性得到增强

热电薄膜和金属电极之间的界面特性极大地影响了薄膜热电器件的性能和实际应用。在此,选择Ni中间层并将其插入Bi 2 Te 3 / Cu中,以同时调节界面的电气和机械性能。同时,还采用Ar / H 2等离子清洗来优化溅射过程中的界面连接。结果表明,引入Ni中间层后可以有效地阻止界面元素扩散,并且Bi 2 Te 3 / Ni / Cu多层薄膜具有出色的界面附着力,并保持约2.7×10的低比接触电阻率-6  Ω厘米2,这可以归因于热膨胀系数的铋之间的匹配23,Ni和Cu和晶格失配的降低。此外,Ni夹层还可以减轻1000次热冲击循环后界面机械性能和电性能的降低,从而提高了界面连接的可靠性和稳定性。这项工作为提高薄膜热电器件中多层界面的综合性能提供了有效的方法。
更新日期:2018-10-10
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