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Unraveling the Origin of Operational Instability of Quantum Dot Based Light-Emitting Diodes
ACS Nano ( IF 15.8 ) Pub Date : 2018-10-10 00:00:00 , DOI: 10.1021/acsnano.8b03386 Jun Hyuk Chang 1 , Philip Park 2 , Heeyoung Jung 3 , Byeong Guk Jeong 4 , Donghyo Hahm 1 , Gabriel Nagamine 5 , Jongkuk Ko 6 , Jinhan Cho 6 , Lazaro A. Padilha 5 , Doh C. Lee 4 , Changhee Lee 3 , Kookheon Char 1 , Wan Ki Bae 7
ACS Nano ( IF 15.8 ) Pub Date : 2018-10-10 00:00:00 , DOI: 10.1021/acsnano.8b03386 Jun Hyuk Chang 1 , Philip Park 2 , Heeyoung Jung 3 , Byeong Guk Jeong 4 , Donghyo Hahm 1 , Gabriel Nagamine 5 , Jongkuk Ko 6 , Jinhan Cho 6 , Lazaro A. Padilha 5 , Doh C. Lee 4 , Changhee Lee 3 , Kookheon Char 1 , Wan Ki Bae 7
Affiliation
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We investigate the operational instability of quantum dot (QD)-based light-emitting diodes (QLEDs). Spectroscopic analysis on the QD emissive layer within devices in chorus with the optoelectronic and electrical characteristics of devices discloses that the device efficiency of QLEDs under operation is indeed deteriorated by two main mechanisms. The first is the luminance efficiency drop of the QD emissive layer in the running devices owing to the accumulation of excess electrons in the QDs, which escalates the possibility of nonradiative Auger recombination processes in the QDs. The other is the electron leakage toward hole transport layers (HTLs) that accompanies irreversible physical damage to the HTL by creating nonradiative recombination centers. These processes are distinguishable in terms of the time scale and the reversibility, but both stem from a single origin, the discrepancy between electron versus hole injection rates into QDs. Based on experimental and calculation results, we propose mechanistic models for the operation of QLEDs in individual quantum dot levels and their degradation during operation and offer rational guidelines that promise the realization of high-performance QLEDs with proven operational stability.
中文翻译：
阐明基于量子点的发光二极管的工作不稳定性的根源
我们调查基于量子点（QD）的发光二极管（QLED）的操作不稳定性。通过合唱中的器件内的QD发射层的光谱分析，利用器件的光电和电学特性，发现运行中的QLED的器件效率确实受到两个主要机制的影响。首先是由于QD中多余电子的积累，运行设备中QD发射层的亮度效率下降，这加剧了QD中非辐射俄歇复合过程的可能性。另一个是电子向空穴传输层（HTL）的泄漏，伴随着通过形成非辐射复合中心对HTL造成不可逆的物理损害。这些过程在时间尺度和可逆性方面是可区分的，与向QD中注入空穴的速率有关。根据实验和计算结果，我们提出了在单个量子点水平上QLED的运行及其在运行过程中的退化的机理模型，并提供了合理的指导方针，有望实现具有可靠运行稳定性的高性能QLED。
更新日期：2018-10-10
中文翻译：
阐明基于量子点的发光二极管的工作不稳定性的根源
我们调查基于量子点（QD）的发光二极管（QLED）的操作不稳定性。通过合唱中的器件内的QD发射层的光谱分析，利用器件的光电和电学特性，发现运行中的QLED的器件效率确实受到两个主要机制的影响。首先是由于QD中多余电子的积累，运行设备中QD发射层的亮度效率下降，这加剧了QD中非辐射俄歇复合过程的可能性。另一个是电子向空穴传输层（HTL）的泄漏，伴随着通过形成非辐射复合中心对HTL造成不可逆的物理损害。这些过程在时间尺度和可逆性方面是可区分的，与向QD中注入空穴的速率有关。根据实验和计算结果，我们提出了在单个量子点水平上QLED的运行及其在运行过程中的退化的机理模型，并提供了合理的指导方针，有望实现具有可靠运行稳定性的高性能QLED。
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