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Control of Interface Defects for Efficient and Stable Quasi‐2D Perovskite Light‐Emitting Diodes Using Nickel Oxide Hole Injection Layer
Advanced Science ( IF 14.3 ) Pub Date : 2018-10-04 , DOI: 10.1002/advs.201801350 Seungjin Lee 1 , Da Bin Kim 1 , Iain Hamilton 2 , Matyas Daboczi 2 , Yun Seok Nam 1 , Bo Ram Lee 3 , Baodan Zhao 4 , Chung Hyeon Jang 1 , Richard H Friend 4 , Ji-Seon Kim 2 , Myoung Hoon Song 1
Advanced Science ( IF 14.3 ) Pub Date : 2018-10-04 , DOI: 10.1002/advs.201801350 Seungjin Lee 1 , Da Bin Kim 1 , Iain Hamilton 2 , Matyas Daboczi 2 , Yun Seok Nam 1 , Bo Ram Lee 3 , Baodan Zhao 4 , Chung Hyeon Jang 1 , Richard H Friend 4 , Ji-Seon Kim 2 , Myoung Hoon Song 1
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Metal halide perovskites (MHPs) have emerged as promising materials for light‐emitting diodes owing to their narrow emission spectrum and wide range of color tunability. However, the low exciton binding energy in MHPs leads to a competition between the trap‐mediated nonradiative recombination and the bimolecular radiative recombination. Here, efficient and stable green emissive perovskite light‐emitting diodes (PeLEDs) with an external quantum efficiency of 14.6% are demonstrated through compositional, dimensional, and interfacial modulations of MHPs. The interfacial energetics and optoelectronic properties of the perovskite layer grown on a nickel oxide (NiOx) and poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate hole injection interfaces are investigated. The better interface formed between the NiOx/perovskite layers in terms of lower density of traps/defects, as well as more balanced charge carriers in the perovskite layer leading to high recombination yield of carriers are the main reasons for significantly improved device efficiency, photostability of perovskite, and operational stability of PeLEDs.
中文翻译：
使用氧化镍空穴注入层控制高效稳定的准二维钙钛矿发光二极管的界面缺陷
金属卤化物钙钛矿（MHP）由于其窄发射光谱和宽范围的颜色可调性而成为有前途的发光二极管材料。然而，MHP 中的低激子结合能导致陷阱介导的非辐射复合和双分子辐射复合之间的竞争。在这里，通过 MHP 的成分、尺寸和界面调制，证明了高效稳定的绿光发射钙钛矿发光二极管 (PeLED)，其外部量子效率为 14.6%。研究了在氧化镍（NiO x ）和聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐空穴注入界面上生长的钙钛矿层的界面能量和光电性质。 NiO x /钙钛矿层之间形成的更好的界面（陷阱/缺陷密度较低）以及钙钛矿层中更平衡的载流子导致载流子复合产率较高，是显着提高器件效率和光稳定性的主要原因钙钛矿的性能以及 PeLED 的运行稳定性。
更新日期：2018-10-04
中文翻译：
使用氧化镍空穴注入层控制高效稳定的准二维钙钛矿发光二极管的界面缺陷
金属卤化物钙钛矿（MHP）由于其窄发射光谱和宽范围的颜色可调性而成为有前途的发光二极管材料。然而，MHP 中的低激子结合能导致陷阱介导的非辐射复合和双分子辐射复合之间的竞争。在这里，通过 MHP 的成分、尺寸和界面调制，证明了高效稳定的绿光发射钙钛矿发光二极管 (PeLED)，其外部量子效率为 14.6%。研究了在氧化镍（NiO x ）和聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐空穴注入界面上生长的钙钛矿层的界面能量和光电性质。 NiO x /钙钛矿层之间形成的更好的界面（陷阱/缺陷密度较低）以及钙钛矿层中更平衡的载流子导致载流子复合产率较高，是显着提高器件效率和光稳定性的主要原因钙钛矿的性能以及 PeLED 的运行稳定性。
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